On the Stability of the Concentration of Silicon Ions in LiCl–KCl-CsCl-K2SiF6 Melts During Electrolysis

IF 2.8 3区材料科学 Q3 CHEMISTRY, PHYSICAL

Silicon Pub Date : 2024-07-31 DOI:10.1007/s12633-024-03096-4

Yulia Parasotchenko, Andrey Suzdaltsev, Yuriy Zaikov

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Abstract

In this work, the interaction of K₂SiF₆ with LiCl–KCl-CsCl chloride melts was studied using cyclic voltammetry and atomic emission spectroscopy analysis, depending on their cationic composition in the temperature range from 550 to 665 °C. It has been determined that an increase in the CsCl/LiCl ratio leads to a decrease in the rate of decomposition of the K₂SiF₆ additive due to the formation of compounds with greater stability due to the replacement of the cation and the predominance of the corresponding reactions. Based on the results of ICP-AES, a decrease in the concentration of silicon ions in the melt during electrolysis was detected, and its final values in the melts at the end of the 12-h exposure were determined. During electrolysis, the silicon concentration also decreases, and in the case of a short electrolysis duration (up to 4 h), it is possible to maintain a sufficient concentration to be carried out without introducing additional K₂SiF₆ in the process. The optimal composition for electrodeposition was also determined, and it was found that a high LiCl content in the melt leads to the formation of lithium fluoride and its inclusion in the deposit.

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论电解过程中 LiCl-KCl-CsCl-K2SiF6 熔体中硅离子浓度的稳定性

在这项工作中，使用循环伏安法和原子发射光谱分析法研究了 K2SiF6 与 LiCl-KCl-CsCl 氯化物熔体的相互作用，这取决于它们在 550 至 665 °C 温度范围内的阳离子成分。结果表明，氯化铯/氯化锂比率的增加会导致 K2SiF6 添加剂的分解率降低，这是因为阳离子的置换作用和相应反应的主导作用形成了稳定性更强的化合物。根据 ICP-AES 的结果，检测到电解过程中熔体中硅离子浓度的下降，并确定了 12 小时暴露结束时熔体中硅离子浓度的最终值。在电解过程中，硅的浓度也会下降，在电解时间较短（最长 4 小时）的情况下，可以保持足够的浓度，在不引入额外 K2SiF6 的情况下进行电解。此外，还确定了电沉积的最佳成分，发现熔体中的高氯化锂含量会导致氟化锂的形成并将其纳入沉积物中。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

5.90

自引率

20.60%

发文量

685

审稿时长

>12 weeks

期刊介绍： The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.