Analog and linearity performance analysis of ferroelectric vertical tunnel field effect transistor with and without source pocket

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-07-29 DOI:10.1002/jnm.3274

Ashish Kumar Singh, Ramesh Kumar, Heranmoy Maity, Prabhat Singh, Sarabdeep Singh

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引用次数: 0

Abstract

This study examines the electrical performance characteristics of a ferroelectric vertical tunnel field-effect transistor (TFET) with and without a source pocket (Si_0.5Ge_0.5). The incorporation of Germanium in the source of the TFET aims to enhance the on-current. The Silvaco TCAD simulation tool is utilized to simulate the proposed structure. To improve device performance, a ferroelectric layer with a vertical length is employed in the gate of the TFET. When the ferroelectric layer partially controls the channel region, device characteristics, such as on-current and subthreshold swing (SS) can be improved (i.e., I_ON = 15.21 × 10⁻⁵ A/μm, I_ON/I_OFF = 5.03 × 10⁹, and a minimum SS of 20.87 mV/decade at 300 K). This article studied a comparison between ferroelectric vertical TFETs and nonferroelectric vertical TFETs, as well as ferroelectric vertical TFETs with and without source pockets. The comparison is done on the basis of DC and RF parameters. Analysis of this comparison represents that ferroelectric vertical TFET with source pocket has improved characteristics.

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带源袋和不带源袋铁电垂直隧道场效应晶体管的模拟和线性性能分析

本研究探讨了有源口袋（Si0.5Ge0.5）和无源口袋的铁电垂直隧道场效应晶体管（TFET）的电气性能特性。在 TFET 源极中加入锗的目的是提高导通电流。我们利用 Silvaco TCAD 仿真工具对所提出的结构进行了仿真。为了提高器件性能，TFET 的栅极采用了垂直长度的铁电层。当铁电层部分控制沟道区时，导通电流和阈下摆动（SS）等器件特性可以得到改善（即 ION = 15.21 × 10-5 A/μm，ION/IOFF = 5.03 × 109，300 K 时的最小 SS 为 20.87 mV/decade）。本文研究了铁电垂直 TFET 与非铁电垂直 TFET 之间的比较，以及有源槽和无源槽铁电垂直 TFET 之间的比较。比较以直流和射频参数为基础。比较分析表明，带源口袋的铁电垂直 TFET 具有更好的特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Journal of Numerical Modelling-Electronic Networks Devices and Fields 工程技术-工程：电子与电气

CiteScore

4.60

自引率

6.20%

发文量

101

审稿时长

>12 weeks

期刊介绍： Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.