The Impact of Band Bending on the Thermal Behaviour of Gain in Type-II GaAs-Based “W”-Lasers

IF 4.3 2区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-07-29 DOI:10.1109/JSTQE.2024.3434566

Dominic A. Duffy;Igor P. Marko;Christian Fuchs;Wolfgang Stolz;Stephen J. Sweeney

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引用次数: 0

Abstract

We undertake a comprehensive investigation of the temperature (T) and injection dependence of the modal gain in 1240 nm-emitting Type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W” laser active regions for 25

$\leq$

300 K. From direct measurements of the short-wavelength transparency point, which serves as a proxy for population inversion, the behaviour of the maximum gain and peak blueshift are used to highlight the different temperature dependencies of the gain at different injection regimes. We show that the thermal redshift of the peak gain at room temperature reduces from 0.53

$\pm$

0.03 nm/

$^\circ$

C under flat band conditions to 0.32

$\pm$

0.03 nm/

$^\circ$

C at threshold. These results demonstrate the significant role of injection-dependent electrostatic effects and how it may be used through design to tailor the thermal properties of semiconductor lasers employing Type-II “W” active regions.

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带弯曲对基于 II 型砷化镓的 "W "型激光器增益热行为的影响

我们对 25$\leq$T$\leq$300 K 时 1240 nm 发射的 Type-II (GaIn)As/Ga(AsSb)/(GaIn)As "W" 激光有源区的模态增益的温度（T）和注入依赖性进行了全面研究。通过直接测量短波长透明点（作为种群反转的替代），最大增益和峰值蓝移的行为被用来突出不同注入制度下增益的不同温度依赖性。我们发现，在室温下，峰值增益的热红移从平带条件下的 0.53$\pm$0.03 nm/$^\circ$C 下降到阈值条件下的 0.32$\pm$0.03 nm/$^\circ$C。这些结果证明了依赖注入的静电效应的重要作用，以及如何通过设计来定制采用 II 型 "W "有源区的半导体激光器的热特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of Selected Topics in Quantum Electronics 工程技术-工程：电子与电气

CiteScore

10.60

自引率

2.00%

发文量

212

审稿时长

3 months

期刊介绍： Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.