Polycrystalline T- and H-Nb2O5 Thin Films Prepared by Pulsed Laser Deposition: Impact of Laser Fluence

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Electronic Materials Pub Date : 2024-07-31 DOI:10.1007/s11664-024-11322-3

Evan T. Salim, Suhair R. Shafeeq, Mohammed Jalal AbdulRazzaq, Makram A. Fakhri, Ahmad S. Azzahrani, Ali Basem, Forat H. Alsultany, Subash C. B. Gopinath

{"title":"Polycrystalline T- and H-Nb2O5 Thin Films Prepared by Pulsed Laser Deposition: Impact of Laser Fluence","authors":"Evan T. Salim, Suhair R. Shafeeq, Mohammed Jalal AbdulRazzaq, Makram A. Fakhri, Ahmad S. Azzahrani, Ali Basem, Forat H. Alsultany, Subash C. B. Gopinath","doi":"10.1007/s11664-024-11322-3","DOIUrl":null,"url":null,"abstract":"Polycrystalline structures of T-Nb2O5 and a remarkable H-Nb2O5 structure were successfully obtained in this work. This was achieved using a Nd:YAG laser in a pulsed laser deposition system at laser fluence values of 9.3, 13.4, 16.2, 21, and 25.2 J cm−2. Raman bands of the prepared films are shown and discussed. The optical bandgaps were estimated at 4.81 eV, 4.73 eV, 3.41 eV, 3.29 eV, and 3.21 eV. Photoluminescence (PL) analyses showed agreement with the estimated indirect bandgaps calculated from Tauc’s plot for each prepared film. The surface average roughness and root-mean-square (RMS) roughness were also determined and are discussed. The surface morphology as illustrated by field-emission scanning electron microscopy (FE-SEM) reveals the obvious impact of laser energy density on the prepared films. Energy-dispersive x-ray (EDX) analyses revealed the highest stoichiometry attributed to a laser fluence of 21 J cm−2.","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":2.2000,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Materials","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s11664-024-11322-3","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

Polycrystalline structures of T-Nb₂O₅ and a remarkable H-Nb₂O₅ structure were successfully obtained in this work. This was achieved using a Nd:YAG laser in a pulsed laser deposition system at laser fluence values of 9.3, 13.4, 16.2, 21, and 25.2 J cm⁻². Raman bands of the prepared films are shown and discussed. The optical bandgaps were estimated at 4.81 eV, 4.73 eV, 3.41 eV, 3.29 eV, and 3.21 eV. Photoluminescence (PL) analyses showed agreement with the estimated indirect bandgaps calculated from Tauc’s plot for each prepared film. The surface average roughness and root-mean-square (RMS) roughness were also determined and are discussed. The surface morphology as illustrated by field-emission scanning electron microscopy (FE-SEM) reveals the obvious impact of laser energy density on the prepared films. Energy-dispersive x-ray (EDX) analyses revealed the highest stoichiometry attributed to a laser fluence of 21 J cm⁻².

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脉冲激光沉积制备的多晶 T-Nb2O5 和 H-Nb2O5 薄膜：激光通量的影响

这项研究成功地获得了 T-Nb2O5 的多晶结构和显著的 H-Nb2O5 结构。这是使用脉冲激光沉积系统中的 Nd:YAG 激光器在 9.3、13.4、16.2、21 和 25.2 J cm-2 的激光通量下实现的。图中显示并讨论了所制备薄膜的拉曼带。光带隙估计分别为 4.81 eV、4.73 eV、3.41 eV、3.29 eV 和 3.21 eV。光致发光（PL）分析表明，每种制备薄膜的光带隙与根据陶克曲线图计算出的估计间接带隙一致。此外，还测定并讨论了表面平均粗糙度和均方根粗糙度。通过场发射扫描电子显微镜（FE-SEM）观察表面形貌，可以发现激光能量密度对制备的薄膜有明显的影响。能量色散 X 射线（EDX）分析表明，21 J cm-2 的激光通量具有最高的化学计量。

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来源期刊

Journal of Electronic Materials 工程技术-材料科学：综合

CiteScore

4.10

自引率

4.80%

发文量

693

审稿时长

3.8 months

期刊介绍： The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.