A Novel Radiation-Hardened Level Shifter With dV/dt Noise Immunity for 600-V HVIC

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Yu Lu;Xiaowu Cai;Jianying Dang;Xupeng Wang;Bo Li
{"title":"A Novel Radiation-Hardened Level Shifter With dV/dt Noise Immunity for 600-V HVIC","authors":"Yu Lu;Xiaowu Cai;Jianying Dang;Xupeng Wang;Bo Li","doi":"10.1109/TNS.2024.3434338","DOIUrl":null,"url":null,"abstract":"This article investigates the degradation mechanism in dV/dt noise immunity robustness of traditional resistive load level shifters (LSs) under total-ionizing-dose (TID) irradiation and proposes a novel radiation-hardened nMOS-R cross-coupled (NRCC) LS with dV/dt noise immunity. When TID irradiation induces threshold voltage drift and increases the off-state leakage current in power devices, the proposed circuit employs a differential and complementary structure to counteract the degradation of electrical performance in both branches caused by the TID irradiation, thereby achieving improved radiation-hardening performance. Measurement results demonstrate that the proposed high-voltage gate drive integrated circuit (HVIC) with the novel LS level exhibits 130-V/ns noise immunity at the irradiation dose of 100 krad(Si). A normalization method is used to process measurement results for visual comparison. The degradation of dV/dt noise immunity capability of the proposed LS is improved by 26.8%, 72.4%, and 94.9% compared with the traditional LS at the irradiation dose of 30, 50, and 100 krad(Si). The HVIC is implemented using a 600-V silicon-on-insulator (SOI) BCD process.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 9","pages":"2086-2093"},"PeriodicalIF":1.9000,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nuclear Science","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10613875/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

This article investigates the degradation mechanism in dV/dt noise immunity robustness of traditional resistive load level shifters (LSs) under total-ionizing-dose (TID) irradiation and proposes a novel radiation-hardened nMOS-R cross-coupled (NRCC) LS with dV/dt noise immunity. When TID irradiation induces threshold voltage drift and increases the off-state leakage current in power devices, the proposed circuit employs a differential and complementary structure to counteract the degradation of electrical performance in both branches caused by the TID irradiation, thereby achieving improved radiation-hardening performance. Measurement results demonstrate that the proposed high-voltage gate drive integrated circuit (HVIC) with the novel LS level exhibits 130-V/ns noise immunity at the irradiation dose of 100 krad(Si). A normalization method is used to process measurement results for visual comparison. The degradation of dV/dt noise immunity capability of the proposed LS is improved by 26.8%, 72.4%, and 94.9% compared with the traditional LS at the irradiation dose of 30, 50, and 100 krad(Si). The HVIC is implemented using a 600-V silicon-on-insulator (SOI) BCD process.
用于 600V 高压集成电路的具有 dV/dt 抗噪能力的新型辐射加固电平转换器
本文研究了传统电阻负载电平转换器(LS)在全电离剂量(TID)辐照下的 dV/dt 噪声抗扰度稳健性退化机制,并提出了一种具有 dV/dt 噪声抗扰度的新型辐射加固 nMOS-R 交叉耦合(NRCC)LS。当 TID 辐照导致功率器件的阈值电压漂移和离态漏电流增加时,所提出的电路采用了一种差分互补结构,以抵消 TID 辐照造成的两个分支电气性能的下降,从而实现更好的辐射硬化性能。测量结果表明,采用新型 LS 电平的拟议高压栅极驱动集成电路(HVIC)在 100 krad(Si) 的辐照剂量下具有 130 V/ns 的抗噪能力。采用归一化方法处理测量结果,以便进行直观比较。在辐照剂量为 30、50 和 100 krad(Si)时,与传统 LS 相比,拟议 LS 的 dV/dt 抗噪能力分别提高了 26.8%、72.4% 和 94.9%。HVIC 采用 600 V 硅绝缘体 (SOI) BCD 工艺实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science 工程技术-工程:电子与电气
CiteScore
3.70
自引率
27.80%
发文量
314
审稿时长
6.2 months
期刊介绍: The IEEE Transactions on Nuclear Science is a publication of the IEEE Nuclear and Plasma Sciences Society. It is viewed as the primary source of technical information in many of the areas it covers. As judged by JCR impact factor, TNS consistently ranks in the top five journals in the category of Nuclear Science & Technology. It has one of the higher immediacy indices, indicating that the information it publishes is viewed as timely, and has a relatively long citation half-life, indicating that the published information also is viewed as valuable for a number of years. The IEEE Transactions on Nuclear Science is published bimonthly. Its scope includes all aspects of the theory and application of nuclear science and engineering. It focuses on instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信