Structural and optical properties of phosphorous doped nanocrystalline silicon deposited using a VHF PECVD process for silicon heterojunction solar cells and optimization of a simple p–n junction cell using SCAP-1D tool†
{"title":"Structural and optical properties of phosphorous doped nanocrystalline silicon deposited using a VHF PECVD process for silicon heterojunction solar cells and optimization of a simple p–n junction cell using SCAP-1D tool†","authors":"Vijay Kumar Gill, Sucheta Juneja, Shiv Kumar Dixit, Shruti Vashist and Sushil Kumar","doi":"10.1039/D4RA02429J","DOIUrl":null,"url":null,"abstract":"<p >Initially hydrogenated silicon (Si:H) thin films have been deposited using a plasma-enhanced chemical vapor deposition technique (PECVD) using silane (SiH<small><sub>4</sub></small>) as a precursor gas diluted in an inert gas argon (Ar) environment. Subsequently phosphine gas (PH<small><sub>3</sub></small>) was used as the n-type dopant and the deposition was carried out at a fixed substrate temperature of 200 °C. The PH<small><sub>3</sub></small> flow rate was varied in the range of 0–1 sccm. The effect of PH<small><sub>3</sub></small> flow rates on optical, electrical, and structural properties of hydrogenated amorphous and micro/nanocrystalline silicon films has been investigated and detailed analysis is presented. These films may find application in heterojunction solar cells as an emitter layer. Further, a crystalline silicon (c-Si) based simple p–n junction solar cell is simulated using an SCAP-1D tool to observe the effect of layer thickness and doping density on solar cell parameters.</p>","PeriodicalId":102,"journal":{"name":"RSC Advances","volume":null,"pages":null},"PeriodicalIF":3.9000,"publicationDate":"2024-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11287241/pdf/","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"RSC Advances","FirstCategoryId":"92","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2024/ra/d4ra02429j","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Initially hydrogenated silicon (Si:H) thin films have been deposited using a plasma-enhanced chemical vapor deposition technique (PECVD) using silane (SiH4) as a precursor gas diluted in an inert gas argon (Ar) environment. Subsequently phosphine gas (PH3) was used as the n-type dopant and the deposition was carried out at a fixed substrate temperature of 200 °C. The PH3 flow rate was varied in the range of 0–1 sccm. The effect of PH3 flow rates on optical, electrical, and structural properties of hydrogenated amorphous and micro/nanocrystalline silicon films has been investigated and detailed analysis is presented. These films may find application in heterojunction solar cells as an emitter layer. Further, a crystalline silicon (c-Si) based simple p–n junction solar cell is simulated using an SCAP-1D tool to observe the effect of layer thickness and doping density on solar cell parameters.
期刊介绍:
An international, peer-reviewed journal covering all of the chemical sciences, including multidisciplinary and emerging areas. RSC Advances is a gold open access journal allowing researchers free access to research articles, and offering an affordable open access publishing option for authors around the world.