{"title":"Short failure localization in advanced package using optoelectronic sampling terahertz time domain reflectometry and deconvolution method","authors":"","doi":"10.1016/j.mejo.2024.106310","DOIUrl":null,"url":null,"abstract":"<div><p>Failure localization in advanced packaging is a challenging task. Optoelectronic sampling Terahertz time-domain reflectometry (OES THz TDR) employs ultrafast lasers to generate high-frequency THz pulse. The THz pulse is coupled into advanced package trace using radio frequency probe. When there is an open or short failure in the circuit, TDR signal could be captured. Deconvolution processing method was introduced to remove noise from multiple reflections of the remaining circuit. A short failure model with remaining circuit was studied. After deconvolution, the TDR localization accuracy improves from 573 μm to 12 μm, and the correlation coefficient improved from 99.612 % to 99.955 %. Advanced package sample including substrate, C4 bump, interposer, and micro bump was analyzed. By comparing the TDR waveform of short failure sample and references, the short failure is localized inside of the die. By destroying the failure sample and measuring the current-voltage curve, the short failure location is verified.</p></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239124000146","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Failure localization in advanced packaging is a challenging task. Optoelectronic sampling Terahertz time-domain reflectometry (OES THz TDR) employs ultrafast lasers to generate high-frequency THz pulse. The THz pulse is coupled into advanced package trace using radio frequency probe. When there is an open or short failure in the circuit, TDR signal could be captured. Deconvolution processing method was introduced to remove noise from multiple reflections of the remaining circuit. A short failure model with remaining circuit was studied. After deconvolution, the TDR localization accuracy improves from 573 μm to 12 μm, and the correlation coefficient improved from 99.612 % to 99.955 %. Advanced package sample including substrate, C4 bump, interposer, and micro bump was analyzed. By comparing the TDR waveform of short failure sample and references, the short failure is localized inside of the die. By destroying the failure sample and measuring the current-voltage curve, the short failure location is verified.
期刊介绍：
Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.
The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc.
Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
