Novel approach to produce 3D boron-doped diamond for pollutant removal from water

IF 3.1 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
{"title":"Novel approach to produce 3D boron-doped diamond for pollutant removal from water","authors":"","doi":"10.1016/j.cartre.2024.100386","DOIUrl":null,"url":null,"abstract":"<div><p>Diamond growth from Chemical Vapor Deposition (CVD) on foreign substrates can require different pretreatment not only to improve the film nucleation but also to assure its adhesion by decreasing the expected film/substrate interface stress. To improve boron-doped film nucleation, growth, and adherence, different substrate pretreatments have been used mainly from the seeding process with diamond powder at various particle sizes. Despite this, the development of diamond growth on a Ti mesh remains difficult because of the requirement of a cohesive film to cover a 3D macroporous sample with varying growth rates based on its distinct network geometry. Then, this work describes a novel approach to growing boron-doped diamond (BDD) and boron-doped ultrananocrystalline diamond (B-UNCD) on titanium dioxide nanotubes (TDNT) produced simultaneously on both sides of Ti mesh by an anodization process. The films were obtained from two-step growth processes by assuring the entire diamond overlay on both TDNT/Ti mesh sides, including their outer/inner surfaces, as a 3D sample. TiO<sub>2</sub> - TiC conversion has dominated the renucleation process, facilitating the nanometric scale control. The film morphologies were systematically analyzed by FEG-SEM images at different sample planes and depths for both sample sides at different stages of film growth. The unique morphology of titania nanotubes associated with columnar and/or renucleation development of BDD, considering the film defects and valley, can systematically increase the electrode specific area. Raman spectra showed the film quality and its micro and/or ultrananodiamond structure and the boron doping features. Also, this growth process allowed a dopant-controlled adjustable conductivity. Then, the boron doping levels for both films were evaluated from Mott-Schottky plots at around 10<sup>19</sup> Bcm<sup>−3</sup>, characterizing them with good conductivity. In addition, electrochemical measurements from Cyclic Voltammetry (CV) confirmed the expected diamond response on redox pair following the quasi-reversible criteria as high-performance diamond electrodes and in situ Raman spectroelectrochemical measurements assessed the stability of samples during electrochemical measurements, ensuring structural integrity. Finally, the samples were applied to the degradation of methylene blue, proving to be superior materials for electrochemical applications due to their advantages compared to those of similar 2D electrodes.</p></div>","PeriodicalId":52629,"journal":{"name":"Carbon Trends","volume":null,"pages":null},"PeriodicalIF":3.1000,"publicationDate":"2024-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2667056924000671/pdfft?md5=22cffc8fbedaac5a3d2b3cdb13939942&pid=1-s2.0-S2667056924000671-main.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Carbon Trends","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2667056924000671","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Diamond growth from Chemical Vapor Deposition (CVD) on foreign substrates can require different pretreatment not only to improve the film nucleation but also to assure its adhesion by decreasing the expected film/substrate interface stress. To improve boron-doped film nucleation, growth, and adherence, different substrate pretreatments have been used mainly from the seeding process with diamond powder at various particle sizes. Despite this, the development of diamond growth on a Ti mesh remains difficult because of the requirement of a cohesive film to cover a 3D macroporous sample with varying growth rates based on its distinct network geometry. Then, this work describes a novel approach to growing boron-doped diamond (BDD) and boron-doped ultrananocrystalline diamond (B-UNCD) on titanium dioxide nanotubes (TDNT) produced simultaneously on both sides of Ti mesh by an anodization process. The films were obtained from two-step growth processes by assuring the entire diamond overlay on both TDNT/Ti mesh sides, including their outer/inner surfaces, as a 3D sample. TiO2 - TiC conversion has dominated the renucleation process, facilitating the nanometric scale control. The film morphologies were systematically analyzed by FEG-SEM images at different sample planes and depths for both sample sides at different stages of film growth. The unique morphology of titania nanotubes associated with columnar and/or renucleation development of BDD, considering the film defects and valley, can systematically increase the electrode specific area. Raman spectra showed the film quality and its micro and/or ultrananodiamond structure and the boron doping features. Also, this growth process allowed a dopant-controlled adjustable conductivity. Then, the boron doping levels for both films were evaluated from Mott-Schottky plots at around 1019 Bcm−3, characterizing them with good conductivity. In addition, electrochemical measurements from Cyclic Voltammetry (CV) confirmed the expected diamond response on redox pair following the quasi-reversible criteria as high-performance diamond electrodes and in situ Raman spectroelectrochemical measurements assessed the stability of samples during electrochemical measurements, ensuring structural integrity. Finally, the samples were applied to the degradation of methylene blue, proving to be superior materials for electrochemical applications due to their advantages compared to those of similar 2D electrodes.

Abstract Image

生产用于去除水中污染物的三维掺硼金刚石的新方法
通过化学气相沉积(CVD)技术在外来基底上生长金刚石需要不同的预处理,这不仅是为了改善薄膜的成核,也是为了通过降低预期的薄膜/基底界面应力来确保其附着力。为了改善掺硼薄膜的成核、生长和附着力,人们主要从不同粒度的金刚石粉末播种工艺开始,采用了不同的基底预处理方法。尽管如此,要在钛网格上形成金刚石生长仍然很困难,因为在三维大孔样品上覆盖一层内聚薄膜的要求很高,而且根据其独特的网络几何形状,生长速度也各不相同。因此,本研究采用了一种新方法,通过阳极氧化工艺在二氧化钛纳米管(TDNT)上生长掺硼金刚石(BDD)和掺硼超钒晶金刚石(B-UNCD)。这些薄膜是通过两步生长过程获得的,即确保整个金刚石覆盖在二氧化钛纳米管/钛网的两面,包括它们的外表面/内表面,作为一个三维样品。TiO2 - TiC 的转换在再成核过程中占主导地位,有利于纳米尺度的控制。通过 FEG-SEM 图像系统分析了薄膜生长不同阶段两侧不同样品平面和深度上的薄膜形貌。考虑到薄膜的缺陷和沟谷,与 BDD 柱状和/或再成核发展相关的纳米二氧化钛管的独特形貌可以系统地增加电极的比面积。拉曼光谱显示了薄膜的质量及其微观和/或超纳米金刚石结构和掺硼特征。此外,这种生长过程还能实现掺杂剂控制的可调电导率。然后,通过莫特-肖特基图(Mott-Schottky plots)评估了这两种薄膜的硼掺杂水平,结果显示它们的硼掺杂水平约为 1019 Bcm-3,具有良好的导电性。此外,循环伏安法(CV)电化学测量证实,作为高性能金刚石电极,金刚石在氧化还原对上的反应符合准可逆标准;原位拉曼光谱电化学测量评估了样品在电化学测量期间的稳定性,确保了结构的完整性。最后,这些样品被应用于亚甲基蓝的降解,与类似的二维电极相比,它们具有更多优势,因此被证明是电化学应用领域的优质材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Carbon Trends
Carbon Trends Materials Science-Materials Science (miscellaneous)
CiteScore
4.60
自引率
0.00%
发文量
88
审稿时长
77 days
文献相关原料
公司名称 产品信息 采购帮参考价格
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信