{"title":"First-principles calculations of the mechanical properties of Mg2Si intermetallic via ternary elements doping","authors":"Hai-Wei Hu, Tinging Liu, Zhendong Li, Xu Wang, Yanbiao Wang, Shaorong Li","doi":"10.1515/ijmr-2023-0274","DOIUrl":null,"url":null,"abstract":"\n Site preference, structural stability and mechanical properties of Mg2Si doped by ternary elements were studied by first-principles calculation. Formation enthalpies show that light element impurity Al and rare earth elements Sc and Y tend to occupy the Mg site, while transition element Cu has a preference for the Si site. Shear modulus to bulk modulus ratio (G/B), Poisson’s ratio ν and Cauchy pressure show that the ductility of Mg2Si is improved for ternary element addition. The introduced parameter of ductility factor D indicates that the enhanced dislocation emission but suppressed micro-crack propagation is the key to enhancing ductility. Electronic structure indicates the brittleness is due to the strong covalent interaction between Mg-2p and Si-3p (Mg-3s and Si-3p/3s). While, with the incorporation of alloying elements, abundant electrons are injected into the matrix Mg2Si. Thereby, the covalent interaction is effectively suppressed and the ductility is improved.","PeriodicalId":510356,"journal":{"name":"International Journal of Materials Research","volume":" 11","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Materials Research","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1515/ijmr-2023-0274","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Site preference, structural stability and mechanical properties of Mg2Si doped by ternary elements were studied by first-principles calculation. Formation enthalpies show that light element impurity Al and rare earth elements Sc and Y tend to occupy the Mg site, while transition element Cu has a preference for the Si site. Shear modulus to bulk modulus ratio (G/B), Poisson’s ratio ν and Cauchy pressure show that the ductility of Mg2Si is improved for ternary element addition. The introduced parameter of ductility factor D indicates that the enhanced dislocation emission but suppressed micro-crack propagation is the key to enhancing ductility. Electronic structure indicates the brittleness is due to the strong covalent interaction between Mg-2p and Si-3p (Mg-3s and Si-3p/3s). While, with the incorporation of alloying elements, abundant electrons are injected into the matrix Mg2Si. Thereby, the covalent interaction is effectively suppressed and the ductility is improved.
通过第一原理计算研究了三元元素掺杂的 Mg2Si 的位点偏好、结构稳定性和力学性能。形成焓表明,轻元素杂质 Al 和稀土元素 Sc 和 Y 倾向于占据 Mg 位点,而过渡元素 Cu 则更倾向于占据 Si 位点。剪切模量与体积模量比(G/B)、泊松比ν和考奇压力表明,添加三元元素后,Mg2Si 的延展性得到改善。引入的延性因子参数 D 表明,增强位错发射但抑制微裂纹扩展是提高延性的关键。电子结构表明,脆性是由于 Mg-2p 和 Si-3p 之间的强共价作用(Mg-3s 和 Si-3p/3s)造成的。而随着合金元素的加入,大量电子被注入基体 Mg2Si。因此,共价作用被有效抑制,延展性得到改善。