Impacts of post-deposition annealing on hole trap generation at SiO2/p-type GaN MOS interfaces

IF 2.3 4区物理与天体物理 Q3 PHYSICS, APPLIED

Applied Physics Express Pub Date : 2024-07-19 DOI:10.35848/1882-0786/ad65b3

Kazuki Tomigahara, Masahiro Hara, M. Nozaki, Takuma Kobayashi, Heiji Watanabe

引用次数: 0

Abstract

In this study, impacts of post-deposition annealing (PDA) on hole trap generation at SiO2/p-GaN MOS interfaces are investigated. While the surface potential is strongly pinned due to severe hole trapping after 800°C PDA, successful hole accumulation is observed when PDA is performed at 200°C. The density of interface hole traps causing surface potential pinning, extracted from the hump in capacitance-voltage curves, is about 1012 cm−2 with 200°C PDA, while over 1013 cm−2 when the PDA temperature exceeds 600°C, regardless of the annealing ambient. Consequently, the origin of these hole traps is speculated to be defects generated by thermal effects.

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沉积后退火对 SiO2/p 型 GaN MOS 接口空穴陷阱生成的影响

本研究调查了沉积后退火（PDA）对 SiO2/p-GaN MOS 接口空穴陷阱产生的影响。虽然在 800°C PDA 后，由于严重的空穴陷阱，表面电势被强烈钉住，但在 200°C 进行 PDA 时，却观察到了成功的空穴积累。从电容-电压曲线的驼峰中提取出的导致表面电位钉销的界面空穴陷阱密度在 200°C PDA 时约为 1012 cm-2，而当 PDA 温度超过 600°C 时则超过 1013 cm-2，与退火环境无关。因此，这些空穴陷阱的起源被推测为热效应产生的缺陷。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Express 物理-物理：应用

CiteScore

4.80

自引率

8.70%

发文量

310

审稿时长

1.2 months

期刊介绍： Applied Physics Express (APEX) is a letters journal devoted solely to rapid dissemination of up-to-date and concise reports on new findings in applied physics. The motto of APEX is high scientific quality and prompt publication. APEX is a sister journal of the Japanese Journal of Applied Physics (JJAP) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).

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