4H-SiC 64-pixels CMOS image sensors with 3T/4T-APS arrays

IF 2.3 4区物理与天体物理 Q3 PHYSICS, APPLIED

Applied Physics Express Pub Date : 2024-07-22 DOI:10.35848/1882-0786/ad665f

Tatsuya Meguro, Masayuki Tsutsumi, A. Takeyama, T. Ohshima, Yasunori Tanaka, S. Kuroki

引用次数: 0

Abstract

For radiation-hardened CMOS image sensor (CIS), 4H-SiC 64-pixel array CMOS image sensors were developed, and the real time imaging with an operation frequency of 30 Hz was demonstrated. Two types of pixel arrays with a 3-transistor active pixel sensor (3T-APS) and a 4-transistor active pixel sensor (4T-APS) were fabricated with SiC MOSFETs, UV photodiodes and 3-layered Al interconnections. The SiC pixel arrays were combined with peripheral circuits and optical lens, and then SiC 64-pixels CMOS image sensors with 3T/4T-APS arrays were developed.

查看原文本刊更多论文

配备 3T/4T-APS 阵列的 4H-SiC 64 像素 CMOS 图像传感器

针对辐射加固型 CMOS 图像传感器（CIS），开发了 4H-SiC 64 像素阵列 CMOS 图像传感器，并演示了工作频率为 30 Hz 的实时成像。利用碳化硅 MOSFET、UV 光电二极管和三层铝互连器件制作了两种像素阵列：3 晶体管有源像素传感器（3T-APS）和 4 晶体管有源像素传感器（4T-APS）。将 SiC 像素阵列与外围电路和光学透镜相结合，开发出了具有 3T/4T-APS 阵列的 SiC 64 像素 CMOS 图像传感器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Applied Physics Express 物理-物理：应用

CiteScore

4.80

自引率

8.70%

发文量

310

审稿时长

1.2 months

期刊介绍： Applied Physics Express (APEX) is a letters journal devoted solely to rapid dissemination of up-to-date and concise reports on new findings in applied physics. The motto of APEX is high scientific quality and prompt publication. APEX is a sister journal of the Japanese Journal of Applied Physics (JJAP) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).