MBE-grown ZnTe epitaxial layer based broadband photodetector with high response and excellent switching characteristics

Subodh Tyagi, Hardhyan Sheoran, Udai Ram Meena, Shivansh Tiwari, Puspashree Mishra, Shiv Kumar, Rajendra Singh
{"title":"MBE-grown ZnTe epitaxial layer based broadband photodetector with high response and excellent switching characteristics","authors":"Subodh Tyagi, Hardhyan Sheoran, Udai Ram Meena, Shivansh Tiwari, Puspashree Mishra, Shiv Kumar, Rajendra Singh","doi":"10.1088/1361-6641/ad6636","DOIUrl":null,"url":null,"abstract":"\n Zinc telluride (ZnTe) epitaxial layers were grown on gallium arsenide (GaAs) (211) substrate at different growth temperatures by molecular beam epitaxy (MBE). The fabricated interdigitated metal semiconductor metal (MSM) configuration-based photodetector on ZnTe epitaxial layers exhibited stable and excellent photo response in a broad spectral range (250 to 550 nm) up to 125 ℃. The room temperature and higher temperature (125 ℃) values of maximum current, spectral responsivity, and detectivity at an applied bias of 5 V and 550 nm wavelength were 3.5×10-8 A, 0.1 A/W and 1×1011 Jones and 1.7×10-6 A, 2.5 A/W and 1.5×1011 Jones, respectively. The maximum photo-to-dark-current ratio (PDCR) value at zero bias and 100 ℃ was obtained for the ZnTe layer grown at an optimum growth temperature of 380 ℃. The high PDCR value exhibits the self-powered capability of the detector. Further, the detector exhibits good On-Off switching to the illuminating light with rise and decay times less than 0.29 s and 0.4 s, respectively, at room temperature. The dependence of photo response on material quality was analysed by varying the substrate growth temperature. The broadband responsivity of the ZnTe-based photodetector shows its capability as a multicolour detector in UV and visible region with the use of suitable blocking filters.","PeriodicalId":507064,"journal":{"name":"Semiconductor Science and Technology","volume":"25 17","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Science and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad6636","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Zinc telluride (ZnTe) epitaxial layers were grown on gallium arsenide (GaAs) (211) substrate at different growth temperatures by molecular beam epitaxy (MBE). The fabricated interdigitated metal semiconductor metal (MSM) configuration-based photodetector on ZnTe epitaxial layers exhibited stable and excellent photo response in a broad spectral range (250 to 550 nm) up to 125 ℃. The room temperature and higher temperature (125 ℃) values of maximum current, spectral responsivity, and detectivity at an applied bias of 5 V and 550 nm wavelength were 3.5×10-8 A, 0.1 A/W and 1×1011 Jones and 1.7×10-6 A, 2.5 A/W and 1.5×1011 Jones, respectively. The maximum photo-to-dark-current ratio (PDCR) value at zero bias and 100 ℃ was obtained for the ZnTe layer grown at an optimum growth temperature of 380 ℃. The high PDCR value exhibits the self-powered capability of the detector. Further, the detector exhibits good On-Off switching to the illuminating light with rise and decay times less than 0.29 s and 0.4 s, respectively, at room temperature. The dependence of photo response on material quality was analysed by varying the substrate growth temperature. The broadband responsivity of the ZnTe-based photodetector shows its capability as a multicolour detector in UV and visible region with the use of suitable blocking filters.
基于 MBE 生长的 ZnTe 外延层的宽带光探测器,具有高响应和优异的开关特性
通过分子束外延(MBE)技术,在砷化镓(GaAs)(211)衬底上以不同的生长温度生长了碲化镉锌(ZnTe)外延层。在 ZnTe 外延层上制备的基于金属半导体金属(MSM)构型的光电探测器在 125 ℃ 以下的宽光谱范围(250 至 550 nm)内表现出稳定而优异的光响应。在 5 V 外加偏压和 550 nm 波长条件下,室温和更高(125 ℃)温度下的最大电流值、光谱响应度和检测度分别为 3.5×10-8 A、0.1 A/W 和 1×1011 Jones,以及 1.7×10-6 A、2.5 A/W 和 1.5×1011 Jones。在 380 ℃ 的最佳生长温度下生长的 ZnTe 层在零偏压和 100 ℃ 时获得了最大光暗电流比值(PDCR)。高 PDCR 值显示了探测器的自供电能力。此外,在室温下,探测器对照明光的开关性能良好,上升和衰减时间分别小于 0.29 秒和 0.4 秒。通过改变衬底生长温度,分析了光响应与材料质量的关系。基于 ZnTe 的光电探测器的宽带响应性表明,使用合适的阻挡滤光片,它可以作为紫外和可见光区域的多色探测器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信