Hyeong Gi Park, Shahzada Qamar Hussain, Jinjoo Park, Junsin Yi
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引用次数: 0
Abstract
We report the influence of hydrogen doping of In2O3-based transparent conducting oxide (TCO) films, including indium tin oxide (ITO), hydrogenated ITO (ITO:H), In2O3 (IO), and hydrogenated In2O3 (IO:H), using radio-frequency magnetron sputtering for SHJ solar cells. The purpose of hydrogen doping is to improve the sheet resistance and work function, while Ar-based ITO films play a critical role in maintaining the electrical and optical properties. The thickness of all TCO films was fixed at 100 nm, which showed the lowest sheet resistance of 34 Ω/sq for the IO:H films. All the films showed an average transmission of more than 87% in the visible-wavelength (400–800 nm) region. The work function was enhanced from 4.96 to 5.45 eV with a hydrogen of 3 sccm. SHJ solar cells using IO:H films achieved an efficiency of 23.6% with an open-circuit voltage (VOC) of 736 mV, a current density (JSC) of 38.83 mA/cm2 and a fill factor (FF) of 82.62%. We performed an improvement in the conversion efficiency of the device with a simulation using the AFORS-HET (automatic for the simulation of heterostructures) program. The efficiency achieved was 25.41% when VOC = 729 mV, JSC = 41.3 mA/cm2, FF = 84.42%.
期刊介绍:
The Journal of Materials Science publishes reviews, full-length papers, and short Communications recording original research results on, or techniques for studying the relationship between structure, properties, and uses of materials. The subjects are seen from international and interdisciplinary perspectives covering areas including metals, ceramics, glasses, polymers, electrical materials, composite materials, fibers, nanostructured materials, nanocomposites, and biological and biomedical materials. The Journal of Materials Science is now firmly established as the leading source of primary communication for scientists investigating the structure and properties of all engineering materials.