Francisco Enilton Alves Nogueira, João Paulo Costa do Nascimento, Tallison Oliveira Abreu, Roterdan Fernandes Abreu, Anupama Ghosh, Felipe Felix do Carmo, Marcelo Antonio Santos da Silva, Ronaldo Santos da Silva, S. V. Trukhanov, Di Zhou, C. Singh, Antonio Sergio Bezerra Sombra
{"title":"Elevated thermal stability of the dielectric properties of CaMoO4–TiO2 composites under temperature variations","authors":"Francisco Enilton Alves Nogueira, João Paulo Costa do Nascimento, Tallison Oliveira Abreu, Roterdan Fernandes Abreu, Anupama Ghosh, Felipe Felix do Carmo, Marcelo Antonio Santos da Silva, Ronaldo Santos da Silva, S. V. Trukhanov, Di Zhou, C. Singh, Antonio Sergio Bezerra Sombra","doi":"10.1007/s10854-024-13227-7","DOIUrl":null,"url":null,"abstract":"<div><p>In this article, the dielectric properties of the ceramic CaMoO<sub>4</sub> (CMO) with additions of 0, 8, 12, and 20% by mass (wt %) of TiO<sub>2</sub> in the radiofrequency (RF) region were studied. X-ray diffraction analysis showed that no secondary phases formed after the addition of TiO<sub>2</sub>. Scanning electron microscopy was used to analyse the effects on the morphology of the CMO. Complex Impedance Spectroscopy (CIS) was performed to evaluate the electrical properties of the materials, while temperature coefficient of capacitance (TCC) analysis showed that at 10 kHz, CMO12 (CMO with 12 wt % TiO<sub>2</sub>) presented a TCC equal to zero, demonstrating that this material is thermally stable at this frequency. The activation energy (<i>E</i><sub>a</sub>) was calculated by AC conductivity and imaginary part of the electric modulus (<i>M</i>″) at different temperatures. The <i>E</i><sub>a</sub> values were close, indicating that the thermally activated conduction process is the same. Moreover, the addition of TiO<sub>2</sub> resulted in a decrease in the <i>E</i><sub>a</sub>, implying an increased conductivity of the material. The results obtained show that the materials evaluated would be interesting candidates for application in electronic circuits that operate in the radiofrequency region.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13227-7","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this article, the dielectric properties of the ceramic CaMoO4 (CMO) with additions of 0, 8, 12, and 20% by mass (wt %) of TiO2 in the radiofrequency (RF) region were studied. X-ray diffraction analysis showed that no secondary phases formed after the addition of TiO2. Scanning electron microscopy was used to analyse the effects on the morphology of the CMO. Complex Impedance Spectroscopy (CIS) was performed to evaluate the electrical properties of the materials, while temperature coefficient of capacitance (TCC) analysis showed that at 10 kHz, CMO12 (CMO with 12 wt % TiO2) presented a TCC equal to zero, demonstrating that this material is thermally stable at this frequency. The activation energy (Ea) was calculated by AC conductivity and imaginary part of the electric modulus (M″) at different temperatures. The Ea values were close, indicating that the thermally activated conduction process is the same. Moreover, the addition of TiO2 resulted in a decrease in the Ea, implying an increased conductivity of the material. The results obtained show that the materials evaluated would be interesting candidates for application in electronic circuits that operate in the radiofrequency region.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.