Synthesis, structural characterization and third-order nonlinear optical properties of 1,1-diphenylmethanaminium 4-aminobenzene-sulfonate hydrate

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
M. Dhanalakshmi, C. Balakrishnan, M. Vijayasri, G. Vinitha, S. Parthiban
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引用次数: 0

Abstract

Single crystals of 1,1-diphenylmethanaminium 4-aminobenzene-sulfonate hydrate (DPASH), were successfully synthesized. Single crystals were grown in a mixed solvent of ethanol and water (1:1) using a gradual evaporation method at room temperature. The crystal structure was determined via single-crystal X-ray diffraction analysis, revealing a monoclinic system (P21/c). The vibrational bands were examined using FT-IR analysis, and the bandgap was estimated using the Kubelka–Munk algorithm. Crystal cohesion was facilitated by N⋯O, O⋯O, and π–π stacking interactions. The compound exhibits a significant third-order nonlinear optical susceptibility (χ(3)), measured to be 2.06 × 10−6 esu. This value underscores the material’s potential for applications in nonlinear optical devices. The Vickers hardness number of the DPASH crystal increased with the applied load. The characteristics of the complex, including shape, size, chemical reactivity sites, and charge density distribution, were analyzed through electron density mapping with electrostatic potential. Molecular surfaces and interactions were further examined via fingerprint plots generated from Hirshfeld surfaces. Additionally, theoretical investigations using the density functional theory method were conducted to determine polarizability and dipole moment.

Abstract Image

1,1-二苯基甲铵对氨基苯磺酸盐水合物的合成、结构表征和三阶非线性光学特性
成功合成了 1,1-二苯基甲铵对氨基苯磺酸盐水合物(DPASH)的单晶体。单晶是在乙醇和水(1:1)混合溶剂中,采用逐步蒸发法在室温下生长的。通过单晶 X 射线衍射分析确定了晶体结构,发现其为单斜体系(P21/c)。利用傅立叶变换红外分析对振动带进行了检测,并利用 Kubelka-Munk 算法估算了带隙。N⋯O、O⋯O 和 π-π 堆积相互作用促进了晶体的内聚力。该化合物具有显著的三阶非线性光学感度(χ(3)),测量值为 2.06 × 10-6 esu。这一数值凸显了该材料在非线性光学设备中的应用潜力。DPASH 晶体的维氏硬度数随施加载荷而增加。通过静电势电子密度图分析了复合物的特征,包括形状、尺寸、化学反应位点和电荷密度分布。通过 Hirshfeld 表面生成的指纹图谱进一步研究了分子表面和相互作用。此外,还使用密度泛函理论方法进行了理论研究,以确定极化性和偶极矩。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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