A semi-classical Floquet-NEGF approach to model photon-assisted tunneling in quantum well devices

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2024-07-27 DOI:10.1007/s10825-024-02203-3

Nathan De Sutter, Emile Vanderstraeten, Dries Vande Ginste

引用次数: 0

Abstract

The non-equilibrium Green’s function formalism is often employed to model photon-assisted tunneling processes in opto-electronic quantum well devices. For this purpose, self-consistent schemes based on a quantum electrodynamical description of light–matter interactions have been proposed before. However, these schemes are typically computationally very demanding. Therefore, in this work, a novel semi-classical method based on Floquet–Green theory is proposed, which strongly mitigates the computational costs. By comparison to results obtained with a traditional, purely quantum mechanical technique, the new approach is validated, shown to be faster, and exhibits superior convergence properties. Finally, a two-band model for superlattice structures is constructed to further illustrate the advantages of the novel, advocated method.

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量子阱器件中光子辅助隧穿的半经典 Floquet-NEGF 建模方法

非平衡格林函数形式主义经常被用来模拟光电子量子阱器件中的光子辅助隧道过程。为此，以前曾提出过基于光-物质相互作用量子电动力学描述的自洽方案。然而，这些方案通常对计算要求很高。因此，本研究提出了一种基于 Floquet-Green 理论的新型半经典方法，大大降低了计算成本。通过与传统的纯量子力学技术得出的结果进行比较，新方法得到了验证，证明其速度更快，并表现出卓越的收敛特性。最后，我们构建了一个超晶格结构的双带模型，进一步说明了所倡导的新方法的优势。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.