{"title":"X‐ray standing wave assisted XANES for depth dependent chemical state analysis of Cr in Cr2O3/Cr bilayer structure","authors":"Ayushi Trivedi, Md. Akhlak Alam, Ajay Khooha, Rajnish Dhawan, Rajendra Kumar Sharma, Shilpa Tripathi, Manoj Kumar Tiwari","doi":"10.1002/sia.7342","DOIUrl":null,"url":null,"abstract":"We report the detailed depth‐dependent structural and chemical analysis of the Cr<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/Cr bilayer structure deposited on Si ˂100˃ substrate. The non‐destructive simultaneous X‐ray reflectivity and grazing incidence X‐ray fluorescence measurements were used for this purpose. Corresponding variation in the chemical state of Cr atoms as a function of depth has been studied using X‐ray standing wave (XSW) assisted X‐ray absorption near edge structure (XANES) measurements. Various oxidation states of Cr atoms present in the Cr<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/Cr bilayer structure were determined using X‐ray photoelectron spectroscopy (XPS). Depth‐resolved XANES measurements confirmed the presence of chromium oxide (Cr<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>) and hydroxide (Cr (OH)<jats:sub>3</jats:sub>) at the top surface of the Cr<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/Cr bilayer structure. The results also reveal the presence of metallic Cr along with its compounds Cr<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and Cr (OH)<jats:sub>3</jats:sub> at the interface medium, showing significant mixing between the Cr<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and Cr layers. Our results clearly demonstrate that the XSW assisted XANES technique is extremely efficient for determining the variation of chemical states at the surface, interface, and different depths of a thin film structure. Such types of analysis are particularly useful for differentiating the presence of a metal from its own oxides, even at higher depths inside a thin film medium.","PeriodicalId":22062,"journal":{"name":"Surface and Interface Analysis","volume":"15 1","pages":""},"PeriodicalIF":1.6000,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surface and Interface Analysis","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1002/sia.7342","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
We report the detailed depth‐dependent structural and chemical analysis of the Cr2O3/Cr bilayer structure deposited on Si ˂100˃ substrate. The non‐destructive simultaneous X‐ray reflectivity and grazing incidence X‐ray fluorescence measurements were used for this purpose. Corresponding variation in the chemical state of Cr atoms as a function of depth has been studied using X‐ray standing wave (XSW) assisted X‐ray absorption near edge structure (XANES) measurements. Various oxidation states of Cr atoms present in the Cr2O3/Cr bilayer structure were determined using X‐ray photoelectron spectroscopy (XPS). Depth‐resolved XANES measurements confirmed the presence of chromium oxide (Cr2O3) and hydroxide (Cr (OH)3) at the top surface of the Cr2O3/Cr bilayer structure. The results also reveal the presence of metallic Cr along with its compounds Cr2O3 and Cr (OH)3 at the interface medium, showing significant mixing between the Cr2O3 and Cr layers. Our results clearly demonstrate that the XSW assisted XANES technique is extremely efficient for determining the variation of chemical states at the surface, interface, and different depths of a thin film structure. Such types of analysis are particularly useful for differentiating the presence of a metal from its own oxides, even at higher depths inside a thin film medium.
期刊介绍:
Surface and Interface Analysis is devoted to the publication of papers dealing with the development and application of techniques for the characterization of surfaces, interfaces and thin films. Papers dealing with standardization and quantification are particularly welcome, and also those which deal with the application of these techniques to industrial problems. Papers dealing with the purely theoretical aspects of the technique will also be considered. Review articles will be published; prior consultation with one of the Editors is advised in these cases. Papers must clearly be of scientific value in the field and will be submitted to two independent referees. Contributions must be in English and must not have been published elsewhere, and authors must agree not to communicate the same material for publication to any other journal. Authors are invited to submit their papers for publication to John Watts (UK only), Jose Sanz (Rest of Europe), John T. Grant (all non-European countries, except Japan) or R. Shimizu (Japan only).