Modulations of the work function and morphology of a single MoS2 nanotube by charge injection†

IF 4.6 3区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY
Maja Remškar, Janez Jelenc, Nikolai Czepurnyi, Matjaž Malok, Luka Pirker, Rupert Schreiner and Andreas K. Hüttel
{"title":"Modulations of the work function and morphology of a single MoS2 nanotube by charge injection†","authors":"Maja Remškar, Janez Jelenc, Nikolai Czepurnyi, Matjaž Malok, Luka Pirker, Rupert Schreiner and Andreas K. Hüttel","doi":"10.1039/D4NA00490F","DOIUrl":null,"url":null,"abstract":"<p >Both the miniaturization of transistor components and the ongoing investigation of material systems with potential for quantum information processing have significantly increased current interest of researchers in semiconducting inorganic nanotubes. Here we report on an additional outstanding aspect of these nanostructures, namely the intrinsic coupling of electronic and mechanical properties. We observe electronic and morphology changes in a single MoS<small><sub>2</sub></small> nanotube, exposed to charge injections by means of an atomic-force-microscopy tip. An elliptic deformation of the nanotube and helical twisting of the nanotube are visible, consistent with the reverse piezoelectric effect. Work-function changes are found to be dependent on the polarity of the injected carriers. An unexpected long-term persistence of the shape deformations is observed and explained with accumulation of structural defects and the resultant strain, which could cause a memory-like charge confinement and a long lasting modulation of the work function.</p>","PeriodicalId":18806,"journal":{"name":"Nanoscale Advances","volume":null,"pages":null},"PeriodicalIF":4.6000,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2024/na/d4na00490f?page=search","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanoscale Advances","FirstCategoryId":"88","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2024/na/d4na00490f","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Both the miniaturization of transistor components and the ongoing investigation of material systems with potential for quantum information processing have significantly increased current interest of researchers in semiconducting inorganic nanotubes. Here we report on an additional outstanding aspect of these nanostructures, namely the intrinsic coupling of electronic and mechanical properties. We observe electronic and morphology changes in a single MoS2 nanotube, exposed to charge injections by means of an atomic-force-microscopy tip. An elliptic deformation of the nanotube and helical twisting of the nanotube are visible, consistent with the reverse piezoelectric effect. Work-function changes are found to be dependent on the polarity of the injected carriers. An unexpected long-term persistence of the shape deformations is observed and explained with accumulation of structural defects and the resultant strain, which could cause a memory-like charge confinement and a long lasting modulation of the work function.

Abstract Image

通过电荷注入改变单根 MoS2 纳米管的功函数和形态
晶体管元件的微型化和对具有量子信息处理潜力的材料系统的持续研究,大大增加了研究人员目前对半导体无机纳米管的兴趣。在此,我们报告了这些纳米结构的另一个突出方面,即电子和机械特性的内在耦合。我们通过原子力显微镜尖端观察了单根 MoS2 纳米管在电荷注入后的电子和形态变化。可以看到纳米管的椭圆形变形和螺旋扭曲,这与反向压电效应一致。功函数变化取决于注入载流子的极性。观察到的形状变形意外地长期持续存在,其原因是结构缺陷的积累和由此产生的应变,这可能导致类似记忆的电荷限制和功函数的长期持续调制。
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来源期刊
Nanoscale Advances
Nanoscale Advances Multiple-
CiteScore
8.00
自引率
2.10%
发文量
461
审稿时长
9 weeks
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