{"title":"Fermi level tuning in Sn1-xPbxTe/Pb heterostructure via changing interface roughness","authors":"Tengteng Liu, Zhaoxia Yi, Bangjin Xie, Weiyan Zheng, Dandan Guan, Shiyong Wang, Hao Zheng, Canhua Liu, Hao Yang, Yaoyi Li, Jinfeng Jia","doi":"10.1007/s11433-024-2383-6","DOIUrl":null,"url":null,"abstract":"<div><p>Superconducting SnTe-type topological crystalline insulators (TCIs) are predicted to host multiple Majorana zero modes (MZMs) which can coexist in a single vortex. Fermi level (FL) close to the Dirac points of topological surface states is helpful for detecting MZMs. However, the TCI SnTe is a heavily p-type semiconductor which is very difficult to modify to n-type via doping or alloying. In this work, we fabricate the atomically flat Sn<sub>1-<i>x</i></sub>Pb<sub><i>x</i></sub>Te/Pb heterostructure by molecular beam epitaxy, and make the p-type Sn<sub>1-<i>x</i></sub>Pb<sub><i>x</i></sub>Te become n-type through changing the interface roughness. Using scanning tunnelling microscope, we find the Dirac points of Sn<sub>1-<i>x</i></sub>Pb<sub><i>x</i></sub>Te/Pb heterostructure are always above the FL due to the Fermi level pinning (FLP) induced by topological surface states at atomically flat interface. After increasing the interface roughness, the FLP effect is suppressed and then the Dirac points of p-type Sn<sub>1-<i>x</i></sub>Pb<sub><i>x</i></sub>Te can be tuned very close to or even below the FL. Our work provides a new method for tuning the FL of SnTe-type TCI which has potential application in novel topological superconductor device.</p></div>","PeriodicalId":774,"journal":{"name":"Science China Physics, Mechanics & Astronomy","volume":null,"pages":null},"PeriodicalIF":6.4000,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Science China Physics, Mechanics & Astronomy","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s11433-024-2383-6","RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Superconducting SnTe-type topological crystalline insulators (TCIs) are predicted to host multiple Majorana zero modes (MZMs) which can coexist in a single vortex. Fermi level (FL) close to the Dirac points of topological surface states is helpful for detecting MZMs. However, the TCI SnTe is a heavily p-type semiconductor which is very difficult to modify to n-type via doping or alloying. In this work, we fabricate the atomically flat Sn1-xPbxTe/Pb heterostructure by molecular beam epitaxy, and make the p-type Sn1-xPbxTe become n-type through changing the interface roughness. Using scanning tunnelling microscope, we find the Dirac points of Sn1-xPbxTe/Pb heterostructure are always above the FL due to the Fermi level pinning (FLP) induced by topological surface states at atomically flat interface. After increasing the interface roughness, the FLP effect is suppressed and then the Dirac points of p-type Sn1-xPbxTe can be tuned very close to or even below the FL. Our work provides a new method for tuning the FL of SnTe-type TCI which has potential application in novel topological superconductor device.
期刊介绍:
Science China Physics, Mechanics & Astronomy, an academic journal cosponsored by the Chinese Academy of Sciences and the National Natural Science Foundation of China, and published by Science China Press, is committed to publishing high-quality, original results in both basic and applied research.
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