{"title":"Investigation into epitaxial growth optimization of a novel AlGaN/GaN HEMT structure for application in UV photodetectors","authors":"Zhiyuan Liu, Wanglong Wu, Xiong Yang, Menglong Zhang, Lixiang Han, Jianpeng Lei, Quansheng Zheng, Nengjie Huo, Xiaozhou Wang, Jingbo Li","doi":"10.1007/s40843-024-2942-8","DOIUrl":null,"url":null,"abstract":"<p>In this work, a novel ultraviolet (UV) photodetector (PD) based on AlGaN/u-GaN/p-GaN/u-GaN heterojunction high electron mobility transistor (HEMT) has been developed. This HEMT epilayer is grown using the metal-organic chemical vapor deposition (MOCVD) technique, and the growth parameters, including the AlGaN growth temperature, preheating temperature of the p-GaN layer, and NH<sub>3</sub>/N<sub>2</sub> flow rate, are optimized to improve the quality of the epilayer. The optimized epilayer exhibits a flat surface with a root mean square value of 0.146 nm and low dislocation density. The p-GaN thickness in epitaxial wafers has a significant influence on electrical and UV photoresponse. With a p-GaN of 1 µm, the UV PD demonstrates a significant switching ratio and transconductance of 10<sup>7</sup> and 127.3 mS mm<sup>−1</sup>, respectively. Acting as a UV PD, it also exhibits a high light on/off ratio (<i>I</i><sub>light</sub>/<i>I</i><sub>dark</sub>) of 6.35 × 10<sup>5</sup>, a high responsivity (<i>R</i>) of 48.11 A W<sup>−1</sup>, and a detectivity (<i>D</i>*) of 6.85 × 10<sup>12</sup> Jones under 365-nm UV illumination with light power density of 86.972 mW cm<sup>−2</sup>. The high-performance HEMT and UV detectors, which incorporate p-GaN etchless technology, have been refined through advancements in epitaxial growth and structural design. These improvements solidify the groundwork for large-scale manufacturing of UV communication systems and laser diodes.</p>","PeriodicalId":773,"journal":{"name":"Science China Materials","volume":null,"pages":null},"PeriodicalIF":6.8000,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Science China Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1007/s40843-024-2942-8","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, a novel ultraviolet (UV) photodetector (PD) based on AlGaN/u-GaN/p-GaN/u-GaN heterojunction high electron mobility transistor (HEMT) has been developed. This HEMT epilayer is grown using the metal-organic chemical vapor deposition (MOCVD) technique, and the growth parameters, including the AlGaN growth temperature, preheating temperature of the p-GaN layer, and NH3/N2 flow rate, are optimized to improve the quality of the epilayer. The optimized epilayer exhibits a flat surface with a root mean square value of 0.146 nm and low dislocation density. The p-GaN thickness in epitaxial wafers has a significant influence on electrical and UV photoresponse. With a p-GaN of 1 µm, the UV PD demonstrates a significant switching ratio and transconductance of 107 and 127.3 mS mm−1, respectively. Acting as a UV PD, it also exhibits a high light on/off ratio (Ilight/Idark) of 6.35 × 105, a high responsivity (R) of 48.11 A W−1, and a detectivity (D*) of 6.85 × 1012 Jones under 365-nm UV illumination with light power density of 86.972 mW cm−2. The high-performance HEMT and UV detectors, which incorporate p-GaN etchless technology, have been refined through advancements in epitaxial growth and structural design. These improvements solidify the groundwork for large-scale manufacturing of UV communication systems and laser diodes.
期刊介绍:
Science China Materials (SCM) is a globally peer-reviewed journal that covers all facets of materials science. It is supervised by the Chinese Academy of Sciences and co-sponsored by the Chinese Academy of Sciences and the National Natural Science Foundation of China. The journal is jointly published monthly in both printed and electronic forms by Science China Press and Springer. The aim of SCM is to encourage communication of high-quality, innovative research results at the cutting-edge interface of materials science with chemistry, physics, biology, and engineering. It focuses on breakthroughs from around the world and aims to become a world-leading academic journal for materials science.