Model-Based Study on the Limit of the Dynamic Load Regulation Performance of a Digital Low Dropout Regulator

IF 2.8 2区工程技术 Q2 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE

IEEE Transactions on Very Large Scale Integration (VLSI) Systems Pub Date : 2024-07-18 DOI:10.1109/TVLSI.2024.3425771

Yichen Xu;Zhaoqing Wang;Jonghyun Oh;Mingoo Seok

{"title":"Model-Based Study on the Limit of the Dynamic Load Regulation Performance of a Digital Low Dropout Regulator","authors":"Yichen Xu;Zhaoqing Wang;Jonghyun Oh;Mingoo Seok","doi":"10.1109/TVLSI.2024.3425771","DOIUrl":null,"url":null,"abstract":"A digital low dropout (DLDO) regulator is one of the most critical building blocks in on-chip power management for its technology portability, voltage scalability, and other benefits associated with digital-oriented design. A key metric of DLDOs is the dynamic load regulation performance, often measured as the maximum current that a DLDO can quickly supply upon a significant load step under a voltage droop constraint (usually 10% of the output voltage). Previous works focused on architecture and circuit techniques to improve this metric. However, limited research focuses on the model development for the dynamic load regulation performance. To fill this gap, in this article, we propose the analytical models of the maximum load current of the standard DLDOs employing feedback and feedforward control laws. The developed models shed light on the impact of various design parameters on the total load current of a DLDO, with which both circuit and system designers can navigate the design space quickly and effectively.","PeriodicalId":13425,"journal":{"name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10601616/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}

引用次数: 0

Abstract

A digital low dropout (DLDO) regulator is one of the most critical building blocks in on-chip power management for its technology portability, voltage scalability, and other benefits associated with digital-oriented design. A key metric of DLDOs is the dynamic load regulation performance, often measured as the maximum current that a DLDO can quickly supply upon a significant load step under a voltage droop constraint (usually 10% of the output voltage). Previous works focused on architecture and circuit techniques to improve this metric. However, limited research focuses on the model development for the dynamic load regulation performance. To fill this gap, in this article, we propose the analytical models of the maximum load current of the standard DLDOs employing feedback and feedforward control laws. The developed models shed light on the impact of various design parameters on the total load current of a DLDO, with which both circuit and system designers can navigate the design space quickly and effectively.

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基于模型的数字低压差稳压器动态负载调节性能极限研究

数字低压降（DLDO）稳压器是片上电源管理中最重要的构件之一，因为它具有技术可移植性、电压可扩展性以及与面向数字设计相关的其他优势。DLDO 的一个关键指标是动态负载调节性能，通常以 DLDO 在电压下降限制（通常为输出电压的 10%）下，在出现显著负载阶跃时能快速提供的最大电流来衡量。以前的工作主要集中在改进这一指标的架构和电路技术上。然而，针对动态负载调节性能模型开发的研究却十分有限。为了填补这一空白，我们在本文中提出了采用反馈和前馈控制法的标准 DLDO 的最大负载电流分析模型。所开发的模型揭示了各种设计参数对 DLDO 总负载电流的影响，电路和系统设计人员可以利用这些模型快速有效地浏览设计空间。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Very Large Scale Integration (VLSI) Systems 工程技术-工程：电子与电气

CiteScore

6.40

自引率

7.10%

发文量

187

审稿时长

3.6 months

期刊介绍： The IEEE Transactions on VLSI Systems is published as a monthly journal under the co-sponsorship of the IEEE Circuits and Systems Society, the IEEE Computer Society, and the IEEE Solid-State Circuits Society. Design and realization of microelectronic systems using VLSI/ULSI technologies require close collaboration among scientists and engineers in the fields of systems architecture, logic and circuit design, chips and wafer fabrication, packaging, testing and systems applications. Generation of specifications, design and verification must be performed at all abstraction levels, including the system, register-transfer, logic, circuit, transistor and process levels. To address this critical area through a common forum, the IEEE Transactions on VLSI Systems have been founded. The editorial board, consisting of international experts, invites original papers which emphasize and merit the novel systems integration aspects of microelectronic systems including interactions among systems design and partitioning, logic and memory design, digital and analog circuit design, layout synthesis, CAD tools, chips and wafer fabrication, testing and packaging, and systems level qualification. Thus, the coverage of these Transactions will focus on VLSI/ULSI microelectronic systems integration.