Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nuclear Science Pub Date : 2024-07-19 DOI:10.1109/TNS.2024.3431436

Isabella R. Wynocker;En Xia Zhang;Robert A. Reed;Ronald D. Schrimpf;Antonio Arreghini;João P. Bastos;Geert Van den Bosch;Dimitri Linten;Daniel M. Fleetwood

{"title":"Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide","authors":"Isabella R. Wynocker;En Xia Zhang;Robert A. Reed;Ronald D. Schrimpf;Antonio Arreghini;João P. Bastos;Geert Van den Bosch;Dimitri Linten;Daniel M. Fleetwood","doi":"10.1109/TNS.2024.3431436","DOIUrl":null,"url":null,"abstract":"Random telegraph noise (RTN) measurements are performed on as-processed, programmed, erased, and irradiated 80 nm vertical charge-trapping nand memory transistors. Variations in current with time of up to ±20% are observed during the RTN testing interval. The RTN of these devices is relatively unaffected by irradiation of devices to 500 krad(SiO2). Root-mean-square (rms) magnitudes of measured RTN exceed predictions of number-fluctuation models (NFMs) by up to six-times. This result demonstrates that fluctuations in carrier scattering rates caused by motion and/or reconfiguration of traps at grain boundaries likely lead to a significant fraction of the low-frequency noise and/or RTN in poly-crystalline Si channel, charge-trapping memory devices. The magnitudes of these fluctuations may present significant challenges to the resolution of highly scaled 3-D memory devices.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10604903","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nuclear Science","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10604903/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

Random telegraph noise (RTN) measurements are performed on as-processed, programmed, erased, and irradiated 80 nm vertical charge-trapping nand memory transistors. Variations in current with time of up to ±20% are observed during the RTN testing interval. The RTN of these devices is relatively unaffected by irradiation of devices to 500 krad(SiO2). Root-mean-square (rms) magnitudes of measured RTN exceed predictions of number-fluctuation models (NFMs) by up to six-times. This result demonstrates that fluctuations in carrier scattering rates caused by motion and/or reconfiguration of traps at grain boundaries likely lead to a significant fraction of the low-frequency noise and/or RTN in poly-crystalline Si channel, charge-trapping memory devices. The magnitudes of these fluctuations may present significant challenges to the resolution of highly scaled 3-D memory devices.

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采用 SiON 隧道氧化物的 80 纳米垂直电荷捕获 NAND 闪存设备的随机电报噪声和辐射响应

随机电报噪声（RTN）测量是在经过加工、编程、擦除和辐照的 80 纳米垂直电荷捕获 nand 存储器晶体管上进行的。在 RTN 测试期间，观察到电流随时间的变化高达 ±20%。将这些器件辐照至 500 krad(SiO2)，其 RTN 相对不受影响。测得的 RTN 均方根（rms）幅值是数波动模型（NFM）预测值的六倍。这一结果表明，在多晶矽沟道电荷捕获存储器件中，载流子散射率的波动很可能是由晶界处陷阱的运动和/或重新配置引起的，从而导致了很大一部分低频噪声和/或 RTN。这些波动的幅度可能会给高比例三维存储器件的分辨率带来重大挑战。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Nuclear Science 工程技术-工程：电子与电气

CiteScore

3.70

自引率

27.80%

发文量

314

审稿时长

6.2 months

期刊介绍： The IEEE Transactions on Nuclear Science is a publication of the IEEE Nuclear and Plasma Sciences Society. It is viewed as the primary source of technical information in many of the areas it covers. As judged by JCR impact factor, TNS consistently ranks in the top five journals in the category of Nuclear Science & Technology. It has one of the higher immediacy indices, indicating that the information it publishes is viewed as timely, and has a relatively long citation half-life, indicating that the published information also is viewed as valuable for a number of years. The IEEE Transactions on Nuclear Science is published bimonthly. Its scope includes all aspects of the theory and application of nuclear science and engineering. It focuses on instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.