Isabella R. Wynocker;En Xia Zhang;Robert A. Reed;Ronald D. Schrimpf;Antonio Arreghini;João P. Bastos;Geert Van den Bosch;Dimitri Linten;Daniel M. Fleetwood
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引用次数: 0
Abstract
Random telegraph noise (RTN) measurements are performed on as-processed, programmed, erased, and irradiated 80 nm vertical charge-trapping nand memory transistors. Variations in current with time of up to ±20% are observed during the RTN testing interval. The RTN of these devices is relatively unaffected by irradiation of devices to 500 krad(SiO2). Root-mean-square (rms) magnitudes of measured RTN exceed predictions of number-fluctuation models (NFMs) by up to six-times. This result demonstrates that fluctuations in carrier scattering rates caused by motion and/or reconfiguration of traps at grain boundaries likely lead to a significant fraction of the low-frequency noise and/or RTN in poly-crystalline Si channel, charge-trapping memory devices. The magnitudes of these fluctuations may present significant challenges to the resolution of highly scaled 3-D memory devices.
期刊介绍:
Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance.
Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.