Oxide dielectrics that grow on 2D materials

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics Pub Date : 2024-07-22 DOI:10.1038/s41928-024-01221-0

Matthew Parker

引用次数: 0

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生长在二维材料上的氧化介质

在第一种方法中，斯坦福大学和延世大学的研究人员在MoS2或WSe2上添加了厚度小于1纳米的蒸发硅种子层，该层会氧化成二氧化硅（SiO2）。然后，再通过 ALD 生长出 5 纳米厚的高介电系数氧化铪 (HfO2)，叠层的总 EOT 为 0.9 纳米。Pop 及其同事还研究了一种低温 ALD 工艺，该工艺使用有机铝作为氧化前驱体，在 MoS2 上直接沉积氧化铝 (AlOx)，而无需种子层。采用 AlOx/HfO2 (3 nm/6 nm) 叠层作为顶栅介电材料的 MoS2 FET 显示出低于 100 mV dec-1 的亚阈值摆幅。这两种方法使用的材料和工艺都与互补金属氧化物半导体（CMOS）技术兼容。

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来源期刊

Nature Electronics Engineering-Electrical and Electronic Engineering

CiteScore

47.50

自引率

2.30%

发文量

159

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