Numerical simulation of GaN single-crystal processing using diamond abrasives under graphene lubrication

Abstract

Molecular dynamics simulations were performed to investigate a novel technique for cutting gallium nitride (GaN) with the help of graphene lubrication. A scratch model of GaN coated with graphene was developed, and changes in the surface topography, atomic displacement, atomic cutting force, temperature, defect atoms, and the process of graphene fracture. The graphene coating on the surface of the GaN workpiece inhibits the movement of atoms in the workpiece during the scratching process, with minimal chip deposition in front of the abrasive. The amount of defective atoms rises as the depth of the scratch increases. Graphene is more susceptible to fracture at larger depths. In addition, using graphene lubrication to cut GaN can enhance surface integrity while concurrently diminishing material removal effectiveness. Furthermore, using graphene as a solid lubricant on various materials, can also greatly reduce friction. These findings provide insights for the design and processing of these brittle materials.