Design and modelling of SiC MPS diodes with superior surge current robustness

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2024-07-16 DOI:10.1016/j.mejo.2024.106298

引用次数: 0

Abstract

The investigation and modelling of the 4H–SiC merged PiN/Schottky (MPS) diode are presented for superior surge current capability design. A bipolar current transmission (BCT) model is proposed for investigating the current transport mechanism of MPS diodes under bipolar operation. The knee voltage (V_turn) defining the conversion from unipolar to bipolar operation is precisely modelled for controlling surge current. According to the proposed model, the method of designing a SiC MPS diode with high robustness against surge current is discussed and concluded primarily, which has great significance for improving the reliability of SiC MPS diodes. Meanwhile, we propose a new hybrid stripe cell design according model calculation and simulation for enhancing the surge current capability of the diode while maintaining high forward current capability. The proposed model and design method are verified by experimental results. And the proposed hybrid stripe cell design has superior surge current robustness while it almost avoids the forward current degradation in experiment.

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具有卓越浪涌电流稳健性的 SiC MPS 二极管的设计与建模

本文介绍了对 4H-SiC 合并式 PiN/Schottky (MPS) 二极管的研究和建模，以实现卓越的浪涌电流能力设计。为研究 MPS 二极管在双极工作时的电流传输机制，提出了一种双极电流传输 (BCT) 模型。为控制浪涌电流，精确模拟了定义从单极工作到双极工作转换的膝点电压 (Vturn)。根据所提出的模型，主要讨论并总结了具有高抗浪涌电流鲁棒性的 SiC MPS 二极管的设计方法，这对提高 SiC MPS 二极管的可靠性具有重要意义。同时，根据模型计算和仿真，我们提出了一种新的混合条纹单元设计方案，以在保持高正向电流能力的同时增强二极管的浪涌电流能力。实验结果验证了所提出的模型和设计方法。所提出的混合条纹电池设计具有卓越的浪涌电流鲁棒性，同时在实验中几乎避免了正向电流衰减。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.