Driving scheme for residual image reduction in active-matrix organic light-emitting diodes display

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Zhiyong Xiong, Shuyang Yu, Qingchen Cao
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引用次数: 0

Abstract

Residual image is a frequent issue in active-matrix organic light-emitting diode (AMOLED) display, due to hysteresis effects of the internal devices. Up to now, some optimized methods have been researched mainly from process perspective. However, the approaches from driving scheme perspective and their electrical mechanism have rarely been demonstrated systematically. In this work, a technical proposal has been proposed to separate the influences of different devices including both thin film transistors (TFTs) and OLEDs furtherly. It was found that the current curve gap was nearly equal to the luminance curve gap and the main factor of residual image was shown to be the hysteresis of TFTs. An equivalent circuit of two thin film transistors and one capacitor (2T1C) was also adopted to substantiate the influences of threshold voltage (Vth) compensation for reducing residual image, and a series of experiments of tuning capacitance were carried out for corresponding compensation improvements. Moreover, other driving scheme optimizations were also studied to reduce residual image furtherly, including increasing the data input time and resetting the driving TFTs. The research opens the possibility of considering reduction of residual image from driving scheme perspective and more systemic analysis from the internal electrical mechanism in AMOLED display.

Abstract Image

减少有源矩阵有机发光二极管显示屏残留图像的驱动方案
残影是有源矩阵有机发光二极管(AMOLED)显示屏中经常出现的问题,这是由于内部器件的滞后效应造成的。迄今为止,人们主要从工艺角度研究了一些优化方法。然而,从驱动方案角度出发的方法及其电气机制却很少得到系统论证。在这项工作中,提出了一项技术建议,以进一步分离不同器件(包括薄膜晶体管和有机发光二极管)的影响。研究发现,电流曲线间隙几乎等于亮度曲线间隙,而残像的主要因素是薄膜晶体管的迟滞。研究还采用了两个薄膜晶体管和一个电容器(2T1C)的等效电路来证实阈值电压(Vth)补偿对减少残像的影响,并进行了一系列调整电容的实验,以实现相应的补偿改进。此外,为了进一步减少残像,还研究了其他驱动方案优化,包括增加数据输入时间和重置驱动 TFT。该研究为从驱动方案角度考虑减少残像以及从 AMOLED 显示屏内部电气机制进行更系统的分析提供了可能。
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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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