{"title":"Compact on-chip dual-band bandpass filter with wide out-of-band suppression based on hybrid coupling technique","authors":"","doi":"10.1016/j.mejo.2024.106304","DOIUrl":null,"url":null,"abstract":"<div><p>A compact dual-band bandpass filter (BPF) with wide out-of-band suppression based on a hybrid coupling technique is proposed. This BPF consists of two hybrid spiral coupled resonators, in which the electrical coupling and magnetic coupling between resonators can generate two transmission paths for dual bands. This dual-band BPF has wide out-of-band suppression. Moreover, its passband frequency and bandwidth can be readily controlled. To illustrate its working principle, an equivalent circuit with even- and odd-mode analysis is presented. This dual-band BPF is fabricated using a silicon integrated passive device (IPD) technology. The fabricated dual-band BPF has a compact size of 1.6 mm × 0.54 mm × 0.23 mm and is measured. The measured results show that this dual-band BPF can generate two bands at 2.45 GHz and 6.15 GHz. In addition, more than 20 dB of suppression is achieved from 7.8 to 20 GHz (8.16<em>f</em><sub>0</sub>). The simulated and measured results exhibit good agreements.</p></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239124000080","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
A compact dual-band bandpass filter (BPF) with wide out-of-band suppression based on a hybrid coupling technique is proposed. This BPF consists of two hybrid spiral coupled resonators, in which the electrical coupling and magnetic coupling between resonators can generate two transmission paths for dual bands. This dual-band BPF has wide out-of-band suppression. Moreover, its passband frequency and bandwidth can be readily controlled. To illustrate its working principle, an equivalent circuit with even- and odd-mode analysis is presented. This dual-band BPF is fabricated using a silicon integrated passive device (IPD) technology. The fabricated dual-band BPF has a compact size of 1.6 mm × 0.54 mm × 0.23 mm and is measured. The measured results show that this dual-band BPF can generate two bands at 2.45 GHz and 6.15 GHz. In addition, more than 20 dB of suppression is achieved from 7.8 to 20 GHz (8.16f0). The simulated and measured results exhibit good agreements.
期刊介绍:
Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.
The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc.
Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.