Influence of aluminum addition on structure, hardness, and oxidation resistance of Ta1−xAlxN thin films

IF 1.6 4区化学 Q4 CHEMISTRY, PHYSICAL

Surface and Interface Analysis Pub Date : 2024-07-17 DOI:10.1002/sia.7343

Jonh Yago Erikson Santos, Iago Lemos Dias, Ronaldo Lima Rezende, Givanilson Brito de Oliveira, Pedro Cardoso da Silva Neto, Fabiana Magalhães Teixeira Mendes, Roberto Hübler, Eduardo Kirinus Tentardini

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Abstract

Ta1−xAlxN thin films with 5, 15, and 40 at.% Al addition were co‐deposited by reactive magnetron sputtering and characterized by Rutherford backscattering spectroscopy (RBS), grazing angle X‐ray diffraction (GAXRD), X‐ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), nanohardness, and oxidation tests. GAXRD and XPS analyses showed, regardless of the % Al added, the non‐existence of ternary nitride Ta1−xAlxN, but always as individual binary nitrides, TaN and AlN. Sample TaAlN_15 obtained the highest hardness and H3/E2 values, possibly due to the AlN grains presence, which were efficient in distorting the TaN lattice. All samples failed oxidation tests at 873 K, showing that the Al addition was not efficient in improving this property for tantalum aluminum nitride thin films.

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加铝对 Ta1-xAlxN 薄膜结构、硬度和抗氧化性的影响

通过反应磁控溅射共沉积了铝添加量分别为 5%、15% 和 40%的 Ta1-xAlxN 薄膜，并通过卢瑟福背散射光谱 (RBS)、掠角 X 射线衍射 (GAXRD)、X 射线光电子能谱 (XPS)、扫描电子显微镜 (SEM)、纳米硬度和氧化测试对其进行了表征。GAXRD 和 XPS 分析表明，无论添加的铝的百分比是多少，都不存在 Ta1-xAlxN 三元氮化物，而始终是单独的二元氮化物，即 TaN 和 AlN。样品 TaAlN_15 的硬度和 H3/E2 值最高，这可能是由于 AlN 晶粒的存在有效地扭曲了 TaN 晶格。所有样品都未能通过 873 K 氧化测试，这表明添加铝并不能有效改善钽氮化铝薄膜的这一特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Surface and Interface Analysis 化学-物理化学

CiteScore

3.30

自引率

5.90%

发文量

130

审稿时长

4.4 months

期刊介绍： Surface and Interface Analysis is devoted to the publication of papers dealing with the development and application of techniques for the characterization of surfaces, interfaces and thin films. Papers dealing with standardization and quantification are particularly welcome, and also those which deal with the application of these techniques to industrial problems. Papers dealing with the purely theoretical aspects of the technique will also be considered. Review articles will be published; prior consultation with one of the Editors is advised in these cases. Papers must clearly be of scientific value in the field and will be submitted to two independent referees. Contributions must be in English and must not have been published elsewhere, and authors must agree not to communicate the same material for publication to any other journal. Authors are invited to submit their papers for publication to John Watts (UK only), Jose Sanz (Rest of Europe), John T. Grant (all non-European countries, except Japan) or R. Shimizu (Japan only).