{"title":"Fabrication of UTC-PDs Having High RF Power Output Efficiency","authors":"Qi Li;Xin Zhou;Huan Li;Zihao Liu;Tao Xiu;Yuan Yao;Song Liang","doi":"10.1109/LPT.2024.3427723","DOIUrl":null,"url":null,"abstract":"In this letter, we report the fabrication of Uni-travelling-carrier photodiode (UTC-PDs) for mm-wave applications. For the fabricated PDs, the area of the p electrode is smaller than that of the absorption area. Though this leads to a response roll off when the frequency is below 3.5 GHz, a higher impedance of the PD can be obtained, which leads to a higher RF power output for a \n<inline-formula> <tex-math>$50~\\Omega $ </tex-math></inline-formula>\n load resistance. For the PD having \n<inline-formula> <tex-math>$50\\times 4~\\mu $ </tex-math></inline-formula>\nm2 absorption area and \n<inline-formula> <tex-math>$46\\times 2.5~\\mu $ </tex-math></inline-formula>\nm2 p electrode area, the measured RF output power at 6 mA photocurrent, −2V bias and 15 GHz is 0.2 dBm. The ideal RF output power for a PD at this current is 0.35 dBm, which is only 0.15 dB higher than the measured RF power, indicating a high RF power output efficiency.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":null,"pages":null},"PeriodicalIF":2.3000,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10597607/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this letter, we report the fabrication of Uni-travelling-carrier photodiode (UTC-PDs) for mm-wave applications. For the fabricated PDs, the area of the p electrode is smaller than that of the absorption area. Though this leads to a response roll off when the frequency is below 3.5 GHz, a higher impedance of the PD can be obtained, which leads to a higher RF power output for a
$50~\Omega $
load resistance. For the PD having
$50\times 4~\mu $
m2 absorption area and
$46\times 2.5~\mu $
m2 p electrode area, the measured RF output power at 6 mA photocurrent, −2V bias and 15 GHz is 0.2 dBm. The ideal RF output power for a PD at this current is 0.35 dBm, which is only 0.15 dB higher than the measured RF power, indicating a high RF power output efficiency.
期刊介绍:
IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.