Tzu-Hsuan Hsu;Joshua Campbell;Jack Kramer;Sinwoo Cho;Ming-Huang Li;Ruochen Lu
{"title":"C-Band Lithium Niobate on Silicon Carbide SAW Resonator With Figure-of-Merit of 124 at 6.5 GHz","authors":"Tzu-Hsuan Hsu;Joshua Campbell;Jack Kramer;Sinwoo Cho;Ming-Huang Li;Ruochen Lu","doi":"10.1109/JMEMS.2024.3423768","DOIUrl":null,"url":null,"abstract":"In this work, we demonstrate a C-band shear-horizontal surface acoustic wave (SH-SAW) resonator with high electromechanical coupling (\n<inline-formula> <tex-math>${k}_{\\mathbf {t}}^{\\mathbf {2}}$ </tex-math></inline-formula>\n) of 22% and a quality factor (Q) of 565 based on a thin-film lithium niobate (LN) on silicon carbide (SiC) platform, featuring an excellent figure-of-merit (FoM \n<inline-formula> <tex-math>$= {k}_{\\mathbf {t}}^{\\mathbf {2}}\\cdot Q_{max}$ </tex-math></inline-formula>\n) of 124 at 6.5 GHz, the highest FoM reported in this frequency range. The resonator frequency upscaling is achieved through wavelength (\n<inline-formula> <tex-math>$\\lambda $ </tex-math></inline-formula>\n) reduction and the use of thin aluminum (Al) electrodes. The LN/SiC waveguide and synchronous resonator design collectively enable effective acoustic energy confinement for a high FoM, even when the normalized thickness of LN approaches a scale of \n<inline-formula> <tex-math>$0.5\\lambda $ </tex-math></inline-formula>\n to \n<inline-formula> <tex-math>$1\\lambda $ </tex-math></inline-formula>\n. To perform a comprehensive study, we also designed and fabricated five additional resonators, expanding the \n<inline-formula> <tex-math>$\\lambda $ </tex-math></inline-formula>\n studied ranging from 480 to 800 nm, in the same 500 nm-thick transferred Y-cut thin-film LN on SiC. The fabricated SH-SAW resonators, operating from 5 to 8 GHz, experimentally demonstrate a \n<inline-formula> <tex-math>${k}_{\\mathbf {t}}^{\\mathbf {2}}$ </tex-math></inline-formula>\n from 20.3% to 22.9% and a Q from 350 to 575, thereby covering the entire C-band with excellent performance. [2024-0070]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 5","pages":"604-609"},"PeriodicalIF":2.5000,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Microelectromechanical Systems","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10597646/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, we demonstrate a C-band shear-horizontal surface acoustic wave (SH-SAW) resonator with high electromechanical coupling (
${k}_{\mathbf {t}}^{\mathbf {2}}$
) of 22% and a quality factor (Q) of 565 based on a thin-film lithium niobate (LN) on silicon carbide (SiC) platform, featuring an excellent figure-of-merit (FoM
$= {k}_{\mathbf {t}}^{\mathbf {2}}\cdot Q_{max}$
) of 124 at 6.5 GHz, the highest FoM reported in this frequency range. The resonator frequency upscaling is achieved through wavelength (
$\lambda $
) reduction and the use of thin aluminum (Al) electrodes. The LN/SiC waveguide and synchronous resonator design collectively enable effective acoustic energy confinement for a high FoM, even when the normalized thickness of LN approaches a scale of
$0.5\lambda $
to
$1\lambda $
. To perform a comprehensive study, we also designed and fabricated five additional resonators, expanding the
$\lambda $
studied ranging from 480 to 800 nm, in the same 500 nm-thick transferred Y-cut thin-film LN on SiC. The fabricated SH-SAW resonators, operating from 5 to 8 GHz, experimentally demonstrate a
${k}_{\mathbf {t}}^{\mathbf {2}}$
from 20.3% to 22.9% and a Q from 350 to 575, thereby covering the entire C-band with excellent performance. [2024-0070]
期刊介绍:
The topics of interest include, but are not limited to: devices ranging in size from microns to millimeters, IC-compatible fabrication techniques, other fabrication techniques, measurement of micro phenomena, theoretical results, new materials and designs, micro actuators, micro robots, micro batteries, bearings, wear, reliability, electrical interconnections, micro telemanipulation, and standards appropriate to MEMS. Application examples and application oriented devices in fluidics, optics, bio-medical engineering, etc., are also of central interest.