Broad spectral response of large array CIS with BSI-PD from visible light to near ultraviolet

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2024-07-14 DOI:10.1016/j.mejo.2024.106344

Changju Liu , Xiuyu Wang , Haoran Xu , Jiangtao Xu , Yang Wang , Zhijun Wu , Yiqiang Li

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Abstract

The narrow spectral response range of traditional CMOS image sensors (CISs) limits their application such as weak-light and ultraviolet (UV) scenes. In the paper, a novel method of broadening spectral response range of traditional CISs is proposed by the design of a wide-PN photodiode (PD), which can be achieved by both back-illuminated (BSI) and gradient-doping structure using traditional process. Theoretical research shows that the wide-PN junction near illuminated surface can broaden the spectral range of the BSI-PD from visible light to near UV, which is conducive to weak-light imaging due to the generation of more photogenerated electrons. Moreover, the gradient potential in the BSI-PD with gradient-doping can inhibit the recombination of photogenerated electron-hole pairs, leading to the improvement of QE. The above BSI-PD is used for a large array CIS with 8520 × 9448 pixels, which was taped out by 110 nm CMOS process. The testing results indicate the large array CIS has a good imaging effect in different scenes.

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采用 BSI-PD 的大型阵列 CIS 具有从可见光到近紫外光的宽光谱响应

传统 CMOS 图像传感器（CIS）的光谱响应范围较窄，限制了其在弱光和紫外线（UV）场景等方面的应用。本文提出了一种拓宽传统 CIS 光谱响应范围的新方法，即设计一种宽 PN 光电二极管（PD），利用传统工艺通过背照式（BSI）和梯度掺杂结构实现。理论研究表明，靠近光照面的宽 PN 结可以将 BSI-PD 的光谱范围从可见光拓宽到近紫外光，由于产生了更多的光生电子，有利于弱光成像。此外，梯度掺杂的 BSI-PD 中的梯度电势可以抑制光生电子-空穴对的重组，从而提高 QE。上述 BSI-PD 被用于采用 110 nm CMOS 工艺制备的 8520 × 9448 像素的大型阵列 CIS。测试结果表明，该大型阵列 CIS 在不同场景下均具有良好的成像效果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.