Computational investigation of elastic properties of hypothetical Half-Heusler compounds XNbSn under hydrostatic pressures

R. Shabara, B. O. Alsobhi
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Abstract

We investigated the electronic, elastic, and magnetic properties of the hypothetical half- Heusler alloys with Niobium base atom, XNbSn with (X= Cr, Mn, Co, Fe, V) uses the full-potential (linearized) augmented plane-wave and local-orbitals [FP-(L)APW + lo] basis set in the WIEN2K ab-initio package based on density functional theory (DFT). We investigated the elastic constants, Shear modulus, young modulus, and bulk modulus of these alloys under different pressures (0, 20, 40, and 80 GPa). We predicted that CoNbSn behaves as a semiconductor with a direct energy gap of 0.99 eV, while the other half- Heusler alloys show a metallic behavior. CoNbSn keeps its semiconductor behavior under higher pressures up to 80 GPa. Both of VNbSn and CrNbSn have a high value of magnetic moments of 2.158 and 3.002 µB respectively. All XNbSn alloys are stable mechanically at different pressures according to the Born-Huang conditions. CoNbSn, FeNbSn, CrNbSn, and MnNbSn behave as a ductile material at ambient pressure.  
静水压力下假设半休斯勒化合物 XNbSn 弹性特性的计算研究
我们使用基于密度泛函理论(DFT)的 WIEN2K ab-initio 软件包中的全电位(线性化)增强平面波和局部轨道[FP-(L)APW + lo]基集,研究了以铌为基原子的假想半 Heusler 合金 XNbSn(X= Cr、Mn、Co、Fe、V)的电子、弹性和磁性能。我们研究了这些合金在不同压力(0、20、40 和 80 GPa)下的弹性常数、剪切模量、年轻模量和体积模量。我们预测 CoNbSn 表现为直接能隙为 0.99 eV 的半导体,而其他半 Heusler 合金则表现为金属。在高达 80 GPa 的高压下,CoNbSn 仍能保持其半导体特性。VNbSn 和 CrNbSn 的磁矩值都很高,分别为 2.158 和 3.002 µB。根据玻恩-黄条件,所有 XNbSn 合金在不同压力下都具有机械稳定性。CoNbSn、FeNbSn、CrNbSn 和 MnNbSn 在常压下表现为韧性材料。
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