{"title":"Impact of nanopores in porous GaN on LED emission based on FDTD simulations","authors":"Shijie Zhang, Shubhra S. Pasayat","doi":"10.1016/j.photonics.2024.101296","DOIUrl":null,"url":null,"abstract":"<div><p>We simulated the light extraction efficiency (LEE) of porous GaN-based InGaN/GaN micrometer-sized light-emitting diodes (μLEDs) emitting within the visible wavelength range using the finite-difference time-domain (FDTD) method. The simulations show that the embedding of a porous GaN layer with 40 % porosity reduces the bottom LEE, while the top side LEE of the μLEDs is increased. In addition, it also exhibits complex scattering properties that affect the microcavity structure of these devices. The LEE and the degree of microcavity structure disruption are related to nanopore size and location. This association weakens with increasing wavelength. Also, a decrease in nanopore size corresponds to a diminished impact on μLED optical properties. Since the porous GaN layer contributes to the deposition of high-quality InGaN, controlling pore size of the porous GaN layer will aid the development of GaN-based red μLEDs and full-color displays.</p></div>","PeriodicalId":49699,"journal":{"name":"Photonics and Nanostructures-Fundamentals and Applications","volume":"61 ","pages":"Article 101296"},"PeriodicalIF":2.5000,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Photonics and Nanostructures-Fundamentals and Applications","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1569441024000713","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
We simulated the light extraction efficiency (LEE) of porous GaN-based InGaN/GaN micrometer-sized light-emitting diodes (μLEDs) emitting within the visible wavelength range using the finite-difference time-domain (FDTD) method. The simulations show that the embedding of a porous GaN layer with 40 % porosity reduces the bottom LEE, while the top side LEE of the μLEDs is increased. In addition, it also exhibits complex scattering properties that affect the microcavity structure of these devices. The LEE and the degree of microcavity structure disruption are related to nanopore size and location. This association weakens with increasing wavelength. Also, a decrease in nanopore size corresponds to a diminished impact on μLED optical properties. Since the porous GaN layer contributes to the deposition of high-quality InGaN, controlling pore size of the porous GaN layer will aid the development of GaN-based red μLEDs and full-color displays.
我们利用有限差分时域（FDTD）方法模拟了多孔氮化镓基 InGaN/GaN 微米级发光二极管（μLEDs）在可见光波长范围内的光萃取效率（LEE）。模拟结果表明，嵌入孔隙率为 40% 的多孔 GaN 层后，μLED 的底部 LEE 降低，而顶部 LEE 增加。此外，它还表现出复杂的散射特性，影响了这些器件的微腔结构。LEE和微腔结构的破坏程度与纳米孔的大小和位置有关。这种关联随着波长的增加而减弱。此外，纳米孔径的减小也会降低对 μLED 光学特性的影响。由于多孔 GaN 层有助于高质量 InGaN 的沉积，因此控制多孔 GaN 层的孔径将有助于开发基于 GaN 的红色 μLED 和全彩显示屏。
期刊介绍：
This journal establishes a dedicated channel for physicists, material scientists, chemists, engineers and computer scientists who are interested in photonics and nanostructures, and especially in research related to photonic crystals, photonic band gaps and metamaterials. The Journal sheds light on the latest developments in this growing field of science that will see the emergence of faster telecommunications and ultimately computers that use light instead of electrons to connect components.
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