Suspended nanomembrane silicon photonic integrated circuits

Chip Pub Date : 2024-09-01 DOI:10.1016/j.chip.2024.100104
Rongxiang Guo , Qiyue Lang , Zunyue Zhang , Haofeng Hu , Tiegen Liu , Jiaqi Wang , Zhenzhou Cheng
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引用次数: 0

Abstract

Leveraging the low linear and nonlinear absorption loss of silicon at mid-infrared (mid-IR) wavelengths, silicon photonic integrated circuits (PICs) have attracted significant attention for mid-IR applications including optical sensing, spectroscopy, and nonlinear optics. However, mid-IR silicon PICs typically show moderate performance compared to state-of-the-art silicon photonic devices operating in the telecommunication band. Here, we proposed and demonstrated suspended nanomembrane silicon (SNS) PICs with light-guiding within deep-subwavelength waveguide thickness for operation in the short-wavelength mid-IR region. We demonstrated key building components, namely, grating couplers, waveguide arrays, micro-resonators, etc., which exhibit excellent performances in bandwidths, back reflections, quality factors, and fabrication tolerance. Moreover, the results show that the proposed SNS PICs have high compatibility with the multi-project wafer foundry services. Our study provides an unprecedented platform for mid-IR integrated photonics and applications.

悬浮纳米膜硅光子集成电路
利用硅在中红外波段的低线性和非线性吸收损耗,硅光子集成电路(PIC)在中红外应用(包括光学传感、光谱学和非线性光学)中备受关注。然而,与在电信波段工作的最先进硅光子器件相比,中红外硅光子集成电路通常性能一般。在此,我们提出并演示了悬浮纳米膜硅(SNS)集成电路,该集成电路在深亚波长波导厚度内具有光导功能,可在短波长中红外区域工作。我们展示了光栅耦合器、波导阵列、微谐振器等关键构建元件,这些元件在带宽、背反射、品质因数和制造容差等方面表现出色。此外,研究结果表明,所提出的 SNS PIC 与多项目晶圆代工服务具有很高的兼容性。我们的研究为中红外集成光子学和应用提供了一个前所未有的平台。
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CiteScore
2.80
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0.00%
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