{"title":"All-2D materials-based 1T1M cells with threshold switching for electronic neurons","authors":"","doi":"10.1016/j.mee.2024.112247","DOIUrl":null,"url":null,"abstract":"<div><p>Two-dimensional (2D) materials may be used to fabricate electronic devices and circuits with enhanced electronic properties. Memristors made of hexagonal boron nitride (h-BN) have shown potential for many applications; however, in most cases they are tested using the current limitation tool of the semiconductor parameter analyzer, which does not match real circuit implementations and produces current overshoots. In this article, we present the first all-2D materials-based one-transistor- one-memristor (1T1M) cells exhibiting threshold-type RS. We connect 4 μm<sup>2</sup> molybdenum disulfide (MoS<sub>2</sub>) transistors in series with 0.3 μm<sup>2</sup> h-BN memristors, leading 1T1M cells able to self-limiting the current. The switching is observed at low voltages below 1 V for >1000 cycles. Our results are a step forward towards the use of 2D materials in electronic devices and circuits.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.6000,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronic Engineering","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167931724001163","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Two-dimensional (2D) materials may be used to fabricate electronic devices and circuits with enhanced electronic properties. Memristors made of hexagonal boron nitride (h-BN) have shown potential for many applications; however, in most cases they are tested using the current limitation tool of the semiconductor parameter analyzer, which does not match real circuit implementations and produces current overshoots. In this article, we present the first all-2D materials-based one-transistor- one-memristor (1T1M) cells exhibiting threshold-type RS. We connect 4 μm2 molybdenum disulfide (MoS2) transistors in series with 0.3 μm2 h-BN memristors, leading 1T1M cells able to self-limiting the current. The switching is observed at low voltages below 1 V for >1000 cycles. Our results are a step forward towards the use of 2D materials in electronic devices and circuits.
期刊介绍：
Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.
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