Both the ionic and covalent bonds stabilize the W@Si12 cluster

Abstract

Si is an important semiconductor material in the development of modern industry. With the miniaturization trend of semiconductor devices, the size of Si has reached the cluster size. The search for stable Si clusters is an important issue. In this work, the electronic structures and stability mechanism of the W@Si12 cluster are calculated by the first-principle calculations. Different from a C2v hexacapped trigonal prism structure of Si12, the W@Si12 cluster presents an embedded hexagonal prism structure with D6h symmetry. The addition of W atom leads to a higher stability. The molecular orbitals show superatomic characteristics for W@Si12 clusters, and their energy levels are more degenerate than that of the Si12 cluster. The population analysis indicates that a charge of 0.184 e is transferred from Si atoms to the center W atom, which suggests an ionic bonds for W-Si. The electron localization function further proves a covalent bond for Si-Si. The enhanced stability of the W@Si12 cluster is attributed to the combination of the ionic and covalent bonds.