A deformation mismatch strategy enables over 120% stretchability of encapsulated serpentine silicon strips for stretchable electronics

FlexMat Pub Date : 2024-07-05 DOI:10.1002/flm2.27
Yihao Shi, Bingchang Zhang, Jianzhong Zhao, Jiahao Qin, Ke Bai, Jia Yu, Xiaohong Zhang
{"title":"A deformation mismatch strategy enables over 120% stretchability of encapsulated serpentine silicon strips for stretchable electronics","authors":"Yihao Shi,&nbsp;Bingchang Zhang,&nbsp;Jianzhong Zhao,&nbsp;Jiahao Qin,&nbsp;Ke Bai,&nbsp;Jia Yu,&nbsp;Xiaohong Zhang","doi":"10.1002/flm2.27","DOIUrl":null,"url":null,"abstract":"<p>It is significant to develop stretchable electronics based on silicon materials for practical applications. Although various stretchable silicon structures have been reported, electronic systems based on them exhibit limited stretchability due to the constraints between them and polymer substrates. Here, an innovative strategy of deformation mismatch is proposed to break the constraints between silicon structures and polymers and effectively reduce the strain concentration in silicon structures. As a result, encapsulated serpentine silicon strips (S-Si strips) achieve unprecedented stretchability, exceeding 120%. The encapsulated S-Si strip also exhibits remarkable mechanical stability and durability, enduring 100 000 cycles of 100% stretch without fracture. The effect of key parameters, including the central angle, thickness, and width of the S-Si strip, on the deformation mismatch is revealed through combing experiments and theoretical analysis, which will guide the rational implementation of the deformation mismatch strategy. Electrical testing showcases the strain-insensitive nature and good electrical stability of encapsulated S-Si strips, benefiting practical applications. This work provides a new paradigm of silicon materials with excellent stretchability and will facilitate the development of stretchable electronics.</p>","PeriodicalId":100533,"journal":{"name":"FlexMat","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/flm2.27","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"FlexMat","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/flm2.27","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

It is significant to develop stretchable electronics based on silicon materials for practical applications. Although various stretchable silicon structures have been reported, electronic systems based on them exhibit limited stretchability due to the constraints between them and polymer substrates. Here, an innovative strategy of deformation mismatch is proposed to break the constraints between silicon structures and polymers and effectively reduce the strain concentration in silicon structures. As a result, encapsulated serpentine silicon strips (S-Si strips) achieve unprecedented stretchability, exceeding 120%. The encapsulated S-Si strip also exhibits remarkable mechanical stability and durability, enduring 100 000 cycles of 100% stretch without fracture. The effect of key parameters, including the central angle, thickness, and width of the S-Si strip, on the deformation mismatch is revealed through combing experiments and theoretical analysis, which will guide the rational implementation of the deformation mismatch strategy. Electrical testing showcases the strain-insensitive nature and good electrical stability of encapsulated S-Si strips, benefiting practical applications. This work provides a new paradigm of silicon materials with excellent stretchability and will facilitate the development of stretchable electronics.

Abstract Image

变形错配策略使封装蛇形硅带的拉伸性超过 120%,适用于可拉伸电子器件
为实际应用开发基于硅材料的可拉伸电子器件意义重大。虽然已有各种可拉伸硅结构的报道,但由于硅结构与聚合物基底之间的限制,基于硅结构的电子系统表现出有限的可拉伸性。本文提出了一种创新的变形错配策略,以打破硅结构与聚合物之间的限制,并有效降低硅结构中的应变浓度。因此,封装蛇形硅带(S-Si 带)实现了前所未有的拉伸性,超过了 120%。封装蛇形硅带还表现出卓越的机械稳定性和耐久性,可承受 100% 拉伸的 100000 次循环而不会断裂。通过结合实验和理论分析,揭示了关键参数(包括 S-Si 带的中心角、厚度和宽度)对形变错配的影响,这将指导形变错配策略的合理实施。电学测试展示了封装硅-硅带的应变不敏感性和良好的电学稳定性,有利于实际应用。这项工作为具有优异拉伸性的硅材料提供了新的范例,将促进可拉伸电子器件的开发。
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