Research of single-event burnout in vertical Ga2O3 FinFET by low carrier lifetime control

Abstract

This paper presents the 2-D simulations of single-event burnout (SEB) in vertical enhancement-mode gallium oxide (Ga2O3) fin-shaped channels field-effect transistor (FinFET) by low carrier lifetime control (LCLC) method. The correctness of the structure parameters and simulated physical models are verified by the basic electrical characteristics in experiments. The SEB simulations show that the most sensitive region to heavy ion is the narrow channel region. The SEB failure is due to the diffusion of a large number of electron-hole pairs induced by heavy ion into a strong electric field region, resulting in a large transient current density to cause the thermal failure. Afterwards, the influences of the narrow channel region width on basic characteristics and SEB performance are discussed. Then, the SEB hardening mechanism of LCLC is studied that the electric field peak in the top of the structure can be effectively reduced, and the transient current caused by second avalanche is restrained. In addition, the basic characteristics with LCLC are proved to be hardly influenced in Ga2O3 FinFET. Finally, the carrier lifetime value and local control region are studied that the SEB hardening performance can be significantly improved by a large enough control area with a low carrier lifetime.