Novel design and modelling of SiC junction barrier Schottky diode with improved Baliga FOM under high-temperature applications

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2024-07-14 DOI:10.1016/j.mejo.2024.106343

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引用次数: 0

Abstract

A novel 650 V/50 A 4H–SiC junction barrier Schottky diode (JBSD) featuring a stripe-square composite cell design (SSC-JBSD) is proposed in this paper to improve the high-temperature performance. A model of the resistance of the JBS (R_JBS) is established to explain the mechanism. The particular cell design of the SSC-JBSD forms a circular current distribution, which can improve the forward current and suppress the degeneration of R_JBS caused by the lower electron mobility at high temperatures. The combination of the stripe and square P+ regions achieves a high current and a lower power loss under high temperature while maintaining a high breakdown voltage. Specifically, the power loss of the SSC-JBSD with a forward current of 50 A only increases by 6.9 % under 450 K compared to that under 300 K, while that of the conventional JBS diode (Conv-JBSD) increases by 14.1 %. And the Baliga figure of merit (FOM) of the SSC-JBSD is 15.6 % higher than that of the Conv-JBSD under a temperature of 450 K. The on-state self-heating measurement shows that the temperature of the SSC-JBSD is approximately 30 K lower than that of the Conv-JBSD after 5 s of constant on-state operation with a forward current of 50 A. The proposed SSC-JBSD demonstrates superior performance at high temperatures, making it an available replacement for Conv-JBSD in harsh environments characterized by high temperatures and large currents.

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在高温应用条件下改进 Baliga FOM 的碳化硅结势垒肖特基二极管的新型设计和建模

本文提出了一种新型 650 V/50 A 4H-SiC 结势垒肖特基二极管（JBSD），它采用条纹-方形复合电池设计（SSC-JBSD），以提高高温性能。本文建立了一个 JBS 电阻（RJBS）模型来解释其机理。SSC-JBSD 的特殊电池设计形成了环形电流分布，可改善正向电流并抑制 RJBS 在高温下因电子迁移率较低而变性。条纹区和方形 P+ 区的组合可在高温条件下实现高电流和低功率损耗，同时保持较高的击穿电压。具体来说，在 450 K 下，正向电流为 50 A 的 SSC-JBSD 的功率损耗比 300 K 下仅增加了 6.9%，而传统 JBS 二极管（Conv-JBSD）的功率损耗则增加了 14.1%。导通自热测量结果表明，在 50 A 正向电流下持续导通工作 5 秒后，SSC-JBSD 的温度比 Conv-JBSD 低约 30 K。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.