Feasibility of a 9 THz HgTe/HgCdTe quantum-well vertical-cavity surface-emitting laser

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2024-07-13 DOI:10.1007/s10825-024-02198-x

A. A. Dubinov, V. Ya. Aleshkin

引用次数: 0

Abstract

We propose an original design for a HgCdTe-based terahertz vertical-cavity surface-emitting laser with twenty 5 nm HgTe quantum wells. Feasibility of laser generation at 9 THz and a lattice temperature of 8 K is shown. The estimate of the threshold pump intensity using laser radiation at a wavelength of 5 μm is 3 W/cm², which makes it possible to expect continuous wave (CW) mode lasing. Such a low required pump intensity will make it possible to create a very compact system of a laser pumped by CW mid-infrared quantum cascade laser.

Abstract Image

查看原文本刊更多论文

9 THz HgTe/HgCdTe 量子阱垂直腔表面发射激光器的可行性

我们提出了一种基于 HgCdTe 的太赫兹垂直腔表面发射激光器的原创设计，该激光器具有 20 个 5 纳米 HgTe 量子阱。图中显示了在 9 太赫兹和 8 K 晶格温度下产生激光的可行性。波长为 5 μm 的激光辐射的阈值泵浦强度估计为 3 W/cm2，这使得连续波（CW）模式激光成为可能。如此低的所需泵浦强度将有可能创建一个由连续波中红外量子级联激光器泵浦的非常紧凑的激光系统。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.