{"title":"Electrical characteristics of Si0.7Ge0.3/Si heterostructure-based n-type GAA MOSFETs","authors":"Pushp Raj , Kuei-Shu Chang-Liao , Pramod Kumar Tiwari","doi":"10.1016/j.mee.2024.112226","DOIUrl":null,"url":null,"abstract":"<div><p>Electrical characteristics of Si<sub>0.7</sub>Ge<sub>0.3</sub>/Si heterostructure-based n-type gate-all-around MOSFETs (GAA MOSFETs) are reported in this work through experimental and numerical simulation data. N-type GAA MOSFETs of varying lengths (60 nm to 160 nm) and widths (20 nm to 42 nm) are fabricated and measured to extract key electrical parameters like ON current, ON-to-OFF current ratio, threshold voltage, DIBL, and subthreshold swing. Moreover, the influence of tensile strain on carrier transport parameters in the buried Si layer is examined in this work. The Ge mole fraction in SiGe is raised from 0.2 to 0.3, and the corresponding changes in XX-stress, and current density are analyzed using a TCAD simulator. The performance of the proposed device has also been compared with unstrained SiGe/Si, all Si, and SiGe-based GAA MOSFETs.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.6000,"publicationDate":"2024-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronic Engineering","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167931724000959","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Electrical characteristics of Si0.7Ge0.3/Si heterostructure-based n-type gate-all-around MOSFETs (GAA MOSFETs) are reported in this work through experimental and numerical simulation data. N-type GAA MOSFETs of varying lengths (60 nm to 160 nm) and widths (20 nm to 42 nm) are fabricated and measured to extract key electrical parameters like ON current, ON-to-OFF current ratio, threshold voltage, DIBL, and subthreshold swing. Moreover, the influence of tensile strain on carrier transport parameters in the buried Si layer is examined in this work. The Ge mole fraction in SiGe is raised from 0.2 to 0.3, and the corresponding changes in XX-stress, and current density are analyzed using a TCAD simulator. The performance of the proposed device has also been compared with unstrained SiGe/Si, all Si, and SiGe-based GAA MOSFETs.
期刊介绍：
Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.
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