Nan Hu , Takahiro Fujisawa , Tomoki Kojima , Takashi Egawa , Makoto Miyoshi
{"title":"Improved performance of InGaN/GaN multiple-quantum-wells photovoltaic devices on free-standing GaN substrates with TMAH treatment","authors":"Nan Hu , Takahiro Fujisawa , Tomoki Kojima , Takashi Egawa , Makoto Miyoshi","doi":"10.1016/j.solmat.2024.113025","DOIUrl":null,"url":null,"abstract":"<div><p>Photovoltaic PV devices necessitate both superior electrical properties and optical absorption due to their unique operational requirements. This study introduces a method using TMAH treatment to simultaneously enhance these characteristics in InGaN/GaN PV devices fabricated on free-standing GaN substrates. By eliminating surface defects on the sidewalls of mesas, which are caused by dry etching, the electrical properties are improved. Concurrently, the creation of textured morphologies on the back surfaces of the devices enhances optical absorption. These different effects of improvements are attributed to the anisotropic chemical resistance of the GaN crystal. This method significantly enhances the performance of InGaN/GaN PV devices.</p></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":null,"pages":null},"PeriodicalIF":6.3000,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solar Energy Materials and Solar Cells","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0927024824003374","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENERGY & FUELS","Score":null,"Total":0}
引用次数: 0
Abstract
Photovoltaic PV devices necessitate both superior electrical properties and optical absorption due to their unique operational requirements. This study introduces a method using TMAH treatment to simultaneously enhance these characteristics in InGaN/GaN PV devices fabricated on free-standing GaN substrates. By eliminating surface defects on the sidewalls of mesas, which are caused by dry etching, the electrical properties are improved. Concurrently, the creation of textured morphologies on the back surfaces of the devices enhances optical absorption. These different effects of improvements are attributed to the anisotropic chemical resistance of the GaN crystal. This method significantly enhances the performance of InGaN/GaN PV devices.
期刊介绍:
Solar Energy Materials & Solar Cells is intended as a vehicle for the dissemination of research results on materials science and technology related to photovoltaic, photothermal and photoelectrochemical solar energy conversion. Materials science is taken in the broadest possible sense and encompasses physics, chemistry, optics, materials fabrication and analysis for all types of materials.