Effect of magnetron sputtering power on the properties of the AlO X monolayer and AlO X /MgF2 bilayer anti-reflection films

IF 3.1 3区物理与天体物理 Q2 PHYSICS, APPLIED

Journal of Physics D: Applied Physics Pub Date : 2024-07-08 DOI:10.1088/1361-6463/ad5c79

Xinfei Song, Changjiang Zhao, Leran Zhao, Juncheng Liu

{"title":"Effect of magnetron sputtering power on the properties of the AlO X monolayer and AlO X /MgF2 bilayer anti-reflection films","authors":"Xinfei Song, Changjiang Zhao, Leran Zhao, Juncheng Liu","doi":"10.1088/1361-6463/ad5c79","DOIUrl":null,"url":null,"abstract":"The AlO<italic toggle=\"yes\">\nX\n</italic> monolayer anti-reflection (MLAR) films and the AlO<italic toggle=\"yes\">\nX\n</italic>/MgF2 bilayer anti-reflection (BLAR) films were deposited on high-purity glasses with magnetron sputtering. We investigated the influences of sputtering power on the O/Al molar ratio, microstructure, and optical properties of the AlO<italic toggle=\"yes\">\nX\n</italic> MLAR films and AlO<italic toggle=\"yes\">\nX\n</italic>/MgF2 BLAR films. The results showed that a too high or a too low sputtering power was detrimental to the preparation of the high-quality films, which could only be obtained when the sputtering power was 115 W. However, the sputtering power did not affect the crystallinity of the films, all of which were amorphous. When the sputtering power was 115 W, the high-purity AlO<italic toggle=\"yes\">\nX\n</italic> MLAR film exhibited an O/Al molar ratio of 2.27:1, a refractive index of 1.426, and an average transmittance (<italic toggle=\"yes\">T</italic>\navg: average transmittance of the quartz glass deposited the film, hereinafter the same) of 94.03% within 300–1100 nm wavelength range. The <italic toggle=\"yes\">T</italic>\navg of AlO<italic toggle=\"yes\">\nX\n</italic>/MgF2 BLAR film with a power of 115 W was 94.99%, which was 1.92% higher than that of the glass substrate. And it improved the cell’s photoelectric conversion efficiency (<italic toggle=\"yes\">PCE</italic>) by 3.19%.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.1000,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics D: Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1088/1361-6463/ad5c79","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

Abstract

The AlO _X monolayer anti-reflection (MLAR) films and the AlO _X /MgF₂ bilayer anti-reflection (BLAR) films were deposited on high-purity glasses with magnetron sputtering. We investigated the influences of sputtering power on the O/Al molar ratio, microstructure, and optical properties of the AlO _X MLAR films and AlO _X /MgF₂ BLAR films. The results showed that a too high or a too low sputtering power was detrimental to the preparation of the high-quality films, which could only be obtained when the sputtering power was 115 W. However, the sputtering power did not affect the crystallinity of the films, all of which were amorphous. When the sputtering power was 115 W, the high-purity AlO _X MLAR film exhibited an O/Al molar ratio of 2.27:1, a refractive index of 1.426, and an average transmittance (T _avg: average transmittance of the quartz glass deposited the film, hereinafter the same) of 94.03% within 300–1100 nm wavelength range. The T _avg of AlO _X /MgF₂ BLAR film with a power of 115 W was 94.99%, which was 1.92% higher than that of the glass substrate. And it improved the cell’s photoelectric conversion efficiency (PCE) by 3.19%.

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磁控溅射功率对 AlO X 单层和 AlO X /MgF2 双层减反射薄膜性能的影响

利用磁控溅射技术在高纯度玻璃上沉积了 AlOX 单层抗反射（MLAR）薄膜和 AlOX/MgF2 双层抗反射（BLAR）薄膜。我们研究了溅射功率对 AlOX MLAR 薄膜和 AlOX/MgF2 BLAR 薄膜的 O/Al 摩尔比、微观结构和光学特性的影响。结果表明，过高或过低的溅射功率都不利于制备高质量的薄膜，只有当溅射功率为 115 W 时才能获得高质量的薄膜。当溅射功率为 115 W 时，高纯度 AlOX MLAR 薄膜的 O/Al 摩尔比为 2.27:1，折射率为 1.426，在 300-1100 nm 波长范围内的平均透射率（Tavg：沉积薄膜的石英玻璃的平均透射率，下同）为 94.03%。功率为 115 W 的 AlOX/MgF2 BLAR 薄膜的 Tavg 为 94.99%，比玻璃基板的 Tavg 高 1.92%。它还将电池的光电转换效率 (PCE) 提高了 3.19%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Physics D: Applied Physics 物理-物理：应用

CiteScore

6.80

自引率

8.80%

发文量

835

审稿时长

2.1 months

期刊介绍： This journal is concerned with all aspects of applied physics research, from biophysics, magnetism, plasmas and semiconductors to the structure and properties of matter.