Depth profile study of LaAl1‐xCrxO3/SrTiO3 (x = 0, 0.2, 0.6, and 1) using time of flight secondary ion mass spectrometry (TOF‐SIMS)

IF 1.6 4区化学 Q4 CHEMISTRY, PHYSICAL

Surface and Interface Analysis Pub Date : 2024-07-08 DOI:10.1002/sia.7341

Manas Kumar Dalai, Gupteswar Samal, Trupti R. Das, Pramod Kumar, Geetanjali Sehgal, Anjana Dogra

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引用次数: 0

Abstract

The conducting two‐dimensional electron gas (2DEG) behavior in LaAlO3 (LAO)/SrTiO3 (STO) and their associated mechanisms from various aspects have brought tremendous attention in the concerned area of research. To correlate the 2DEG behavior with their compositions, we have performed time of flight secondary ion mass spectrometry (TOF‐SIMS) depth profile analysis of thin films of Cr‐doped LAO/STO system as LaAl1‐xCrxO3 (x = 0, 0.2, 0.6 and 1) deposited over TiO2 terminated STO substrate, which includes two parent compounds LAO/STO (metallic) and LCO/STO (insulating). The uniform decrease of La and Al concentration at the interface of LAO/STO (metallic) system and in the contrary the nonuniformity of La and Cr concentration in LCO/STO (insulating) system have been highlighted. The uniform variation of ionic concentration at the interface of LAO/STO may increase the career concentrations to make the system metallic. The upward and downward diffusion at the interfaces of intermediate compositions varies differently from their parent ones due to the mixing of Al and Cr. Our results may help to understand the conducting nature of LAO/STO system for future developments and applications in such system.

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利用飞行时间二次离子质谱 (TOF-SIMS) 对 LaAl1-xCrxO3/SrTiO3 （x = 0、0.2、0.6 和 1）进行深度剖面研究

LaAlO3（LAO）/SrTiO3（STO）中的导电二维电子气（2DEG）行为及其相关机制从各个方面引起了相关研究领域的极大关注。为了将 2DEG 行为与它们的组成联系起来，我们对沉积在以二氧化钛为端基的 STO（包括两种母体化合物 LAO/STO（金属）和 LCO/STO（绝缘））上的掺铬 LAO/STO 系统薄膜进行了飞行时间二次离子质谱（TOF-SIMS）深度剖面分析。LAO/STO（金属）体系界面上 La 和 Al 的浓度均匀下降，相反，LCO/STO（绝缘）体系中 La 和 Cr 的浓度则不均匀。LAO/STO 界面上离子浓度的均匀变化可能会增加职业浓度，从而使系统具有金属特性。由于铝和铬的混合，中间成分界面上的向上和向下扩散与母体不同。我们的研究结果可能有助于了解 LAO/STO 系统的导电性质，从而促进此类系统的未来开发和应用。

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来源期刊

Surface and Interface Analysis 化学-物理化学

CiteScore

3.30

自引率

5.90%

发文量

130

审稿时长

4.4 months

期刊介绍： Surface and Interface Analysis is devoted to the publication of papers dealing with the development and application of techniques for the characterization of surfaces, interfaces and thin films. Papers dealing with standardization and quantification are particularly welcome, and also those which deal with the application of these techniques to industrial problems. Papers dealing with the purely theoretical aspects of the technique will also be considered. Review articles will be published; prior consultation with one of the Editors is advised in these cases. Papers must clearly be of scientific value in the field and will be submitted to two independent referees. Contributions must be in English and must not have been published elsewhere, and authors must agree not to communicate the same material for publication to any other journal. Authors are invited to submit their papers for publication to John Watts (UK only), Jose Sanz (Rest of Europe), John T. Grant (all non-European countries, except Japan) or R. Shimizu (Japan only).