A fast-switching low-loss field-stop IGBT with dual control gate of SIPOS material

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2024-07-09 DOI:10.1063/5.0186543

Chunping Tang, Baoxing Duan, Yintang Yang

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引用次数: 0

Abstract

A fast-switching low-loss field-stop insulated gate bipolar transistor with a dual control gate (DIGBT) of a semi-insulating polycrytalline silicon (SIPOS) material is proposed in this paper. Because the SIPOS has uniform high resistance, it has an approximate linear electric potential distribution. When DIGBT conducts, the higher electric potential on SIPOS causes the P-type drift region (P-drift) to generate an inversion layer of electrons, adjusting the number of carriers and making the generation of non-equilibrium carriers no longer dependent on the doping concentration in P-drift (Nd) but on the electric potential distribution on SIPOS. Therefore, it can solve the contradiction among the breakdown voltage, forward voltage drop [VCE(sat)], turn-off time (toff), and turn-off loss (Eoff) caused by the Nd. Through Technology Computer Aided Design (TCAD) simulation, the VCE(sat) of DIGBT is 30.6% lower than that of SJFS IGBT. Meanwhile, DIGBT reduces the toff by 62.8% while reducing the Eoff by 83.0% compared to SJFS IGBT. In addition, the static latch-up I–V and the forward biased safe operating area of the DIGBT have been significantly improved. This paper adjusts the number of carriers through the characteristics of SIPOS material, enabling the above-mentioned physical phenomena to be applied in insulated gate bipolar transistor power devices and achieving device performance breakthroughs.

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采用 SIPOS 材料双控制栅极的快速开关低损耗场截止 IGBT

本文提出了一种具有双控制栅极（DIGBT）的半绝缘多晶体硅（SIPOS）材料快速开关低损耗场截止绝缘栅双极晶体管。由于 SIPOS 具有均匀的高电阻，因此它具有近似线性的电动势分布。当 DIGBT 导通时，SIPOS 上较高的电动势会使 P 型漂移区（P-drift）产生电子反转层，从而调整载流子的数量，使非平衡态载流子的产生不再取决于 P-drift（Nd）中的掺杂浓度，而是取决于 SIPOS 上的电动势分布。因此，它可以解决 Nd 引起的击穿电压、正向压降 [VCE(sat)]、关断时间 (toff) 和关断损耗 (Eoff) 之间的矛盾。通过技术计算机辅助设计（TCAD）仿真，DIGBT 的 VCE(sat) 比 SJFS IGBT 低 30.6%。同时，与 SJFS IGBT 相比，DIGBT 的 toff 降低了 62.8%，Eoff 降低了 83.0%。此外，DIGBT 的静态闩锁 I-V 和正向偏置安全工作区也得到了显著改善。本文通过 SIPOS 材料的特性调整了载流子数量，使上述物理现象得以应用于绝缘栅双极晶体管功率器件，实现了器件性能的突破。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.

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