Silicon-Based 850 nm GaAs/GaAsP-Strained Quantum Well Lasers with Active Region Dislocation Blocking Layers

IF 3.7 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Jian Li, Chen Jiang, Hao Liu, Yang Zhang, Hao Zhai, Xin Wei, Qi Wang, Gang Wu, Chuanchuan Li, Xiaomin Ren
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Abstract

A silicon-based room temperature (RT) continuous wave (CW) operation quantum well (QW) laser emitting at 850 nm is reported in this article. By applying the dislocation filter superlattice, the threading dislocation density of the GaAs pseudosubstrate on Si is reduced to 1.8 × 107 cm−2. The metal-organic chemical vapor deposition-grown laser structure with GaAs/GaAsP QW and InAlAs active region dislocation blocking layer are fabricated into broad-stripe Fabry–Perot laser diodes. A typical threshold current and threshold current density of 286 mA and 715 Acm−2 are obtained with 2 mm cavity length and 20 um stripe width samples. A 94.2 mW single-facet output power lasing around 854 nm and a 0.314 WA−1 slope efficiency is measured under RT CW operation. After a 10-min aging process, the tested laser can operate stably under continuous operation conditions at RT and the lifetime can be approximated using an exponential fitting curve, indicating a good life reliability of this QW laser.

Abstract Image

具有有源区位错阻挡层的硅基 850 nm GaAs/GaAsP 应变量子阱激光器
本文报告了一种发射波长为 850 nm 的硅基室温(RT)连续波(CW)工作量子阱(QW)激光器。通过应用位错滤波器超晶格,硅基砷化镓伪基底的穿线位错密度降低到 1.8 × 107 cm-2。金属有机化学气相沉积生长的激光结构带有 GaAs/GaAsP QW 和 InAlAs 有源区位错阻挡层,被制作成宽条纹法布里-珀罗激光二极管。2 毫米腔长和 20 微米条纹宽度样品的典型阈值电流和阈值电流密度分别为 286 mA 和 715 Acm-2。在实时连续波工作条件下,测量到在 854 纳米附近有 94.2 mW 的单面输出功率和 0.314 WA-1 的斜率效率。经过 10 分钟的老化过程后,测试激光器可以在 RT 连续工作条件下稳定运行,其寿命可以用指数拟合曲线来近似估算,这表明这种 QW 激光器具有良好的寿命可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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