Approaching scalable quantum memory with integrated atomic devices

IF 11.9 1区 物理与天体物理 Q1 PHYSICS, APPLIED
Bo Jing, Shihai Wei, Longyao Zhang, Dianli Zhou, Yuxing He, Xihua Zou, Wei Pan, Hai-Zhi Song, Lianshan Yan
{"title":"Approaching scalable quantum memory with integrated atomic devices","authors":"Bo Jing, Shihai Wei, Longyao Zhang, Dianli Zhou, Yuxing He, Xihua Zou, Wei Pan, Hai-Zhi Song, Lianshan Yan","doi":"10.1063/5.0179539","DOIUrl":null,"url":null,"abstract":"Quantum memory, which maps photonic quantum information into a stationary medium and retrieves it at a chosen time, plays a vital role in the advancement of quantum information science. In particular, the scalability of a quantum memory is a central challenge for quantum network that can be overcome by using integrated devices. Quantum memory with an integrated device is highly appealing since it not only expands the number of memories to increase data rates, but also offers seamless compatibility with other on-chip devices and existing fiber network, enabling scalable and convenient applications. Over the past few decades, substantial efforts have been dedicated to achieving integrated quantum memory using rare earth ions doped solid-state materials, color centers, and atomic gases. These physical platforms are the primary candidates for such devices, where remarkable advantages have been demonstrated in achieving high-performance integrated quantum memory, paving the way for efficiently establishing robust and scalable quantum network with integrated quantum devices. In this paper, we aim to provide a comprehensive review of integrated quantum memory, encompassing its background and significance, advancement with bulky memory system, fabrication of integrated device, and its memory function considering various performance metrics. Additionally, we will address the challenges associated with integrated quantum memory and explore its potential applications. By analyzing the current state of the field, this review will make a valuable contribution by offering illustrative examples and providing helpful guidance for future achievements in practical integrated quantum memory.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"27 1","pages":""},"PeriodicalIF":11.9000,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied physics reviews","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0179539","RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0

Abstract

Quantum memory, which maps photonic quantum information into a stationary medium and retrieves it at a chosen time, plays a vital role in the advancement of quantum information science. In particular, the scalability of a quantum memory is a central challenge for quantum network that can be overcome by using integrated devices. Quantum memory with an integrated device is highly appealing since it not only expands the number of memories to increase data rates, but also offers seamless compatibility with other on-chip devices and existing fiber network, enabling scalable and convenient applications. Over the past few decades, substantial efforts have been dedicated to achieving integrated quantum memory using rare earth ions doped solid-state materials, color centers, and atomic gases. These physical platforms are the primary candidates for such devices, where remarkable advantages have been demonstrated in achieving high-performance integrated quantum memory, paving the way for efficiently establishing robust and scalable quantum network with integrated quantum devices. In this paper, we aim to provide a comprehensive review of integrated quantum memory, encompassing its background and significance, advancement with bulky memory system, fabrication of integrated device, and its memory function considering various performance metrics. Additionally, we will address the challenges associated with integrated quantum memory and explore its potential applications. By analyzing the current state of the field, this review will make a valuable contribution by offering illustrative examples and providing helpful guidance for future achievements in practical integrated quantum memory.
利用集成原子器件接近可扩展量子存储器
量子存储器将光子量子信息映射到静态介质中,并在选定的时间进行检索,在量子信息科学的发展中发挥着至关重要的作用。特别是,量子存储器的可扩展性是量子网络面临的核心挑战,而使用集成器件则可以克服这一挑战。采用集成器件的量子存储器极具吸引力,因为它不仅能扩展存储器的数量以提高数据传输速率,还能与其他片上器件和现有光纤网络无缝兼容,从而实现可扩展的便捷应用。过去几十年来,人们一直致力于利用掺杂稀土离子的固态材料、色彩中心和原子气体实现集成量子存储器。这些物理平台是此类器件的主要候选者,在实现高性能集成量子存储器方面已展现出显著优势,为利用集成量子器件高效建立稳健且可扩展的量子网络铺平了道路。本文旨在对集成量子存储器进行全面回顾,包括其背景和意义、与笨重存储器系统相比的进步、集成器件的制造,以及考虑到各种性能指标的存储器功能。此外,我们还将讨论与集成量子存储器相关的挑战,并探索其潜在应用。通过分析该领域的现状,这篇综述将提供有价值的实例,并为实用集成量子存储器的未来成就提供有益的指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Applied physics reviews
Applied physics reviews PHYSICS, APPLIED-
CiteScore
22.50
自引率
2.00%
发文量
113
审稿时长
2 months
期刊介绍: Applied Physics Reviews (APR) is a journal featuring articles on critical topics in experimental or theoretical research in applied physics and applications of physics to other scientific and engineering branches. The publication includes two main types of articles: Original Research: These articles report on high-quality, novel research studies that are of significant interest to the applied physics community. Reviews: Review articles in APR can either be authoritative and comprehensive assessments of established areas of applied physics or short, timely reviews of recent advances in established fields or emerging areas of applied physics.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信