Simultaneous engineering of the conductivity and work function of biphenylene via fluorine adsorption

IF 5.9 3区 材料科学 Q2 CHEMISTRY, PHYSICAL
Jiao Zhang , Ying Xie , Yinan Tang , Yinyin Qian , Jing He , Zhe Wang , Yanchang Zhang , Jiankang Chen , Lin Yang , Bing Zheng
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引用次数: 0

Abstract

Biphenylene (BP) is a new member of the two-dimensional C nanomaterial family, and successful fabrication of BP offers an excellent opportunity for developing innovative C-based electronics. However, its unusual metallicity critically restricts its applications in field-effect transistors (FETs) and photocatalysis. Simultaneously, its relatively low work function (ϕ, 4.33 eV) seriously restricts its applications in anode materials of electronic devices. Therefore, understanding the tunabilities of electronic properties and ϕ of BP-based nanomaterials is crucial to guide experimental exploration; nevertheless, to date, little attention has been paid to this area. Herein, we theoretically demonstrate that conductivity of fluorinated BP (Fn-BP) evolves in the order metallic → semimetallic → semiconductivity with increasing F concentration, attributed to a bonding transition of BP (sp2 → sp2 + sp3 → sp3). Particularly, ϕ of BP can be significantly improved (4.82–6.97 eV) by fluorination, approximately two-fold higher than that of Fn-graphene owing to p electron transfer between F and BP. Consequently, metallic F2D-BP and semimetallic F4S-BP with favorable ϕs can be utilized as substitutes for Au and Pt anodes, respectively. Specifically, F8D-BP, F16D-BP, and F24D-BP with exceptional band gaps of 0.40, 2.80, and 3.44 eV, respectively, exhibit high potentials for making channel materials in FETs, candidate materials in photocatalysis, and buffer layers in solar cells, respectively.

Abstract Image

通过氟吸附同时设计联苯的电导率和功函数
联苯(BP)是二维 C 纳米材料家族中的新成员,成功制备 BP 为开发基于 C 的创新电子器件提供了绝佳机会。然而,其不寻常的金属性严重限制了它在场效应晶体管(FET)和光催化领域的应用。同时,其相对较低的功函数(j,4.33 eV)也严重限制了其在电子设备阳极材料中的应用。因此,了解基于 BP 的纳米材料的电子特性和 ϕ 的可调性对于指导实验探索至关重要。在本文中,我们从理论上证明了氟化 BP(Fn-BP)的导电性随着 F 浓度的增加按金属→半金属→半导的顺序演变,这归因于 BP 的成键转变(sp2 → sp2 + sp3 → sp3)。特别是,由于 F 和 BP 之间的对电子转移,BP 的 ϕ 可以通过氟化显著提高(4.82-6.97 eV),比 Fn 石墨烯的 ϕ 高出约两倍。因此,具有良好ϕs的金属 F2D-BP 和半金属 F4S-BP 可分别用作金和铂阳极的替代物。具体来说,F8D-BP、F16D-BP 和 F24D-BP 分别具有 0.40、2.80 和 3.44 eV 的优异带隙,在制作场效应晶体管的沟道材料、光催化的候选材料和太阳能电池的缓冲层方面具有很大的潜力。
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来源期刊
FlatChem
FlatChem Multiple-
CiteScore
8.40
自引率
6.50%
发文量
104
审稿时长
26 days
期刊介绍: FlatChem - Chemistry of Flat Materials, a new voice in the community, publishes original and significant, cutting-edge research related to the chemistry of graphene and related 2D & layered materials. The overall aim of the journal is to combine the chemistry and applications of these materials, where the submission of communications, full papers, and concepts should contain chemistry in a materials context, which can be both experimental and/or theoretical. In addition to original research articles, FlatChem also offers reviews, minireviews, highlights and perspectives on the future of this research area with the scientific leaders in fields related to Flat Materials. Topics of interest include, but are not limited to, the following: -Design, synthesis, applications and investigation of graphene, graphene related materials and other 2D & layered materials (for example Silicene, Germanene, Phosphorene, MXenes, Boron nitride, Transition metal dichalcogenides) -Characterization of these materials using all forms of spectroscopy and microscopy techniques -Chemical modification or functionalization and dispersion of these materials, as well as interactions with other materials -Exploring the surface chemistry of these materials for applications in: Sensors or detectors in electrochemical/Lab on a Chip devices, Composite materials, Membranes, Environment technology, Catalysis for energy storage and conversion (for example fuel cells, supercapacitors, batteries, hydrogen storage), Biomedical technology (drug delivery, biosensing, bioimaging)
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