Mechanism of electrical performance degradation of 4H-SiC junction barrier Schottky diodes induced by neutron irradiation

IF 1.4 3区物理与天体物理 Q3 INSTRUMENTS & INSTRUMENTATION

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms Pub Date : 2024-07-02 DOI:10.1016/j.nimb.2024.165452

Hao Li , Jingying Wang , Binghua Song , Heyi Li , Long Geng , Binghuang Duan , Shuo Zhang

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Abstract

4H-SiC junction barrier Schottky diodes (JBS) were irradiated by reactor neutrons. The degradation in the electrical performance of JBS is characterized by I-V and C-V measurement, and the concentrations of traps introduced by irradiation were measured by deep-level transient spectroscopy (DLTS). TCAD simulations were employed to fit the I-V characteristics through adjusting the Schottky barrier height, concentrations of various traps induced by irradiation and the carrier mobility. The experimental results indicate that neutron irradiation would lead to an increase of the forward on-state resistance and reverse breakdown voltage. The simulation results indicates that the increase in forward on-state resistance and reverse breakdown voltage is primarily attributed to carrier capture by acceptor traps. A comparison between trap concentrations obtained from simulations and DLTS highlighted that when neutron fluence exceeds 2 × 10¹³ cm⁻², certain deep-level traps might not be entirely discernible through DLTS, particularly given a maximum measurement temperature of 500 K.

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中子辐照诱导 4H-SiC 结势垒肖特基二极管电气性能退化的机理

反应堆中子辐照了 4H-SiC 结势垒肖特基二极管（JBS）。通过 I-V 和 C-V 测量对 JBS 的电性能退化进行了表征，并通过深层瞬态光谱（DLTS）测量了辐照引入的陷阱浓度。通过调整肖特基势垒高度、辐照诱导的各种陷阱浓度和载流子迁移率，采用 TCAD 模拟来拟合 I-V 特性。实验结果表明，中子辐照会导致正向导通电阻和反向击穿电压增加。模拟结果表明，正向导通电阻和反向击穿电压的增加主要归因于受体陷阱对载流子的捕获。对模拟和 DLTS 得出的陷阱浓度进行比较后发现，当中子通量超过 2 × 1013 cm-2 时，通过 DLTS 可能无法完全辨别某些深层陷阱，尤其是在最高测量温度为 500 K 的情况下。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms 物理-核科学技术

CiteScore

2.80

自引率

7.70%

发文量

231

审稿时长

1.9 months

期刊介绍： Section B of Nuclear Instruments and Methods in Physics Research covers all aspects of the interaction of energetic beams with atoms, molecules and aggregate forms of matter. This includes ion beam analysis and ion beam modification of materials as well as basic data of importance for these studies. Topics of general interest include: atomic collisions in solids, particle channelling, all aspects of collision cascades, the modification of materials by energetic beams, ion implantation, irradiation - induced changes in materials, the physics and chemistry of beam interactions and the analysis of materials by all forms of energetic radiation. Modification by ion, laser and electron beams for the study of electronic materials, metals, ceramics, insulators, polymers and other important and new materials systems are included. Related studies, such as the application of ion beam analysis to biological, archaeological and geological samples as well as applications to solve problems in planetary science are also welcome. Energetic beams of interest include atomic and molecular ions, neutrons, positrons and muons, plasmas directed at surfaces, electron and photon beams, including laser treated surfaces and studies of solids by photon radiation from rotating anodes, synchrotrons, etc. In addition, the interaction between various forms of radiation and radiation-induced deposition processes are relevant.