{"title":"Temperature dependence of photoconductivity in layered semiconductor p-GaSe","authors":"T. G. Naghiyev, R. F. Babayeva, Y. I. Aliyev","doi":"10.1140/epjb/s10051-024-00731-2","DOIUrl":null,"url":null,"abstract":"<div><p>The temperature dependence of photoconductivity in p-GaSe crystals with different initial (having at 77 K) dark resistivities (<i>ρ</i><sub>77</sub> = 2·10<sup>3</sup> ÷ 7·10<sup>6</sup> Ω·cm) was experimentally studied in the temperature range of 77 ÷ 300 K. It has been established that in crystals with <i>ρ</i><sub>77</sub> < 10<sup>4</sup> Ω cm, only the value of the photocurrent changes depending on temperature. At <i>T</i> ≤ 250 K, in the higher-resistivity crystal, the spectral distribution, lux-ampere characteristic, as well as photoconductivity kinetics also change noticeably with a change in temperature. The obtained experimental results are explained on the basis of a model of crystalline semiconductor with random macroscopic defects.</p><h3>Graphical abstract</h3>\n<div><figure><div><div><picture><source><img></source></picture></div><div><p>Temperature dependence of photoconductivity in low- (1) and high-resistance (2) p-GaSe crystals</p></div></div></figure></div></div>","PeriodicalId":787,"journal":{"name":"The European Physical Journal B","volume":"97 6","pages":""},"PeriodicalIF":1.6000,"publicationDate":"2024-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The European Physical Journal B","FirstCategoryId":"4","ListUrlMain":"https://link.springer.com/article/10.1140/epjb/s10051-024-00731-2","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
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Abstract
The temperature dependence of photoconductivity in p-GaSe crystals with different initial (having at 77 K) dark resistivities (ρ77 = 2·103 ÷ 7·106 Ω·cm) was experimentally studied in the temperature range of 77 ÷ 300 K. It has been established that in crystals with ρ77 < 104 Ω cm, only the value of the photocurrent changes depending on temperature. At T ≤ 250 K, in the higher-resistivity crystal, the spectral distribution, lux-ampere characteristic, as well as photoconductivity kinetics also change noticeably with a change in temperature. The obtained experimental results are explained on the basis of a model of crystalline semiconductor with random macroscopic defects.
Graphical abstract
Temperature dependence of photoconductivity in low- (1) and high-resistance (2) p-GaSe crystals
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